Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy

D. Cherns, R. F. Webster, S. V. Novikov, C. T. Foxon, A. M. Fischer, Fernando Ponce, S. J. Haigh

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

The composition of InxGa1-xN nanorods grown by molecular beam epitaxy with nominal x=0.5 has been mapped by electron microscopy using Z-contrast imaging and x-ray microanalysis. This shows a coherent and highly strained core-shell structure with a near-atomically sharp boundary between a Ga-rich shell (x∼0.3) and an In-rich core (x∼0.7), which itself has In- and Ga-rich platelets alternating along the growth axis. It is proposed that the shell and core regions are lateral and vertical growth sectors, with the core structure determined by spinodal decomposition.

Original languageEnglish (US)
Article number215705
JournalNanotechnology
Volume25
Issue number21
DOIs
StatePublished - May 30 2014

Keywords

  • EDX mapping
  • InGaN nanorods
  • core-shell structures
  • molecular beam epitaxy
  • spinodal decomposition
  • transmission electron microscopy

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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    Cherns, D., Webster, R. F., Novikov, S. V., Foxon, C. T., Fischer, A. M., Ponce, F., & Haigh, S. J. (2014). Compositional variations in In0.5Ga0.5N nanorods grown by molecular beam epitaxy. Nanotechnology, 25(21), [215705]. https://doi.org/10.1088/0957-4484/25/21/215705