Compositional instability in InAlN/GaN lattice-matched epitaxy

Q. Y. Wei, T. Li, Y. Huang, J. Y. Huang, Z. T. Chen, T. Egawa, Fernando Ponce

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The In xAl 1-xN/GaN system is found to show compositional instability at the lattice-matched composition (x = 0.18) in epitaxial layers grown by metal organic chemical vapor deposition. The breakdown in compositional homogeneity is triggered by threading dislocations with a screw component propagating from the GaN underlayer, which tend to open up into V-grooves at a certain thickness of the In xAl 1-xN layer. The V-grooves coalesce at ∼200 nm and are filled with material that exhibits a significant drop in indium content and a broad luminescence peak. Transmission electron microscopy suggests that the structural breakdown is due to heterogeneous nucleation and growth at the facets of the V-grooves.

Original languageEnglish (US)
Article number092101
JournalApplied Physics Letters
Issue number9
StatePublished - Feb 27 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Wei, Q. Y., Li, T., Huang, Y., Huang, J. Y., Chen, Z. T., Egawa, T., & Ponce, F. (2012). Compositional instability in InAlN/GaN lattice-matched epitaxy. Applied Physics Letters, 100(9), [092101].