Compositional dependence of the direct and indirect band gaps in Ge1-ySny alloys from room temperature photoluminescence: Implications for the indirect to direct gap crossover in intrinsic and n-type materials

L. Jiang, J. D. Gallagher, C. L. Senaratne, T. Aoki, J. Mathews, John Kouvetakis, Jose Menendez

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