Compositional dependence of the absorption edge and dark currents in Ge1-x-ySixSny/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si 4H10, and SnD4

R. T. Beeler, Chi Xu, David Smith, G. Grzybowski, Jose Menendez, John Kouvetakis

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Physics & Astronomy