Abstract
Lattice-matched Ge1-x-ySixSny (x ≤ 0.2, y ≤ 0.05) alloys were deposited defect-free on Ge(001) substrates via low-temperature (330-290 °C) reactions of Ge4H10, Si4H10 and SnD4 hydrides, and used to fabricate pin photodetectors. The growth is carried out under gas-source molecular beam epitaxy conditions in a specially designed single-wafer reactor. Optical responsivity measurements reveal absorption edges between 0.88 eV and 0.98 eV, which are used to determine the compositional dependence of the direct band gap. A study of the I-V characteristics of the diodes shows that the dark current is very weakly correlated with the number of Si-Sn bonds in the alloy.
Original language | English (US) |
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Article number | 221111 |
Journal | Applied Physics Letters |
Volume | 101 |
Issue number | 22 |
DOIs | |
State | Published - Nov 26 2012 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)