TY - JOUR

T1 - Compositional dependence of Raman frequencies in ternary Ge1-x-y Six Sny alloys

AU - D'Costa, V. R.

AU - Tolle, J.

AU - Poweleit, C. D.

AU - Kouvetakis, John

AU - Menendez, Jose

PY - 2007/7/31

Y1 - 2007/7/31

N2 - The Ge-Ge, Si-Si, and Si-Ge Raman frequencies in Ge1-x-y Six Sny alloys were measured for x≤0.2 and y≤0.1. The Ge-Ge and Si-Si mode frequencies are found to be linear functions of composition over the measured range. The coefficients obtained from linear fits to the experimental data are similar to those measured in binary alloys incorporating Si, Ge, or Sn, suggesting that the linear behavior extends over the entire range of possible compositions (x,y) to include the binary alloys as special cases. The linear coefficients are shown to follow a universal behavior that results from the scaling of phonon dispersion curves in Si, Ge, and α-Sn.

AB - The Ge-Ge, Si-Si, and Si-Ge Raman frequencies in Ge1-x-y Six Sny alloys were measured for x≤0.2 and y≤0.1. The Ge-Ge and Si-Si mode frequencies are found to be linear functions of composition over the measured range. The coefficients obtained from linear fits to the experimental data are similar to those measured in binary alloys incorporating Si, Ge, or Sn, suggesting that the linear behavior extends over the entire range of possible compositions (x,y) to include the binary alloys as special cases. The linear coefficients are shown to follow a universal behavior that results from the scaling of phonon dispersion curves in Si, Ge, and α-Sn.

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U2 - 10.1103/PhysRevB.76.035211

DO - 10.1103/PhysRevB.76.035211

M3 - Article

AN - SCOPUS:34547567543

VL - 76

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 3

M1 - 035211

ER -