Compositional dependence of critical point transitions in Ge 1-xSn x alloys

Candi S. Cook; Vijay D'Costa; John Kouvetakis; Stefan Zollner; Jose Menendez

doi:10.1063/1.1993997

Compositional dependence of critical point transitions in Ge _1-xSn _x alloys

Candi S. Cook, Vijay D'Costa, John Kouvetakis, Stefan Zollner, Jose Menendez

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The compositional dependence of the E ₁, E ₁+Δ ₁, E ₀′, and E ₂ optical transition energies in Ge _1-xSn _x alloys has been measured in the 0 < x < 0.18 range. Deviations from linearity are clearly observed and characterized by a bowing parameter b. The value of this parameter is much larger in Ge _1-xSn _x alloys than in the isoelectronic Si _1-xGe _x system.

Original language	English (US)
Title of host publication	PHYSICS OF SEMICONDUCTORS
Subtitle of host publication	27th International Conference on the Physics of Semiconductors, ICPS-27
Pages	65-66
Number of pages	2
DOIs	https://doi.org/10.1063/1.1993997
State	Published - Jun 30 2005
Event	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States Duration: Jul 26 2004 → Jul 30 2004

Publication series

Name	AIP Conference Proceedings
Volume	772
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/Territory	United States
City	Flagstaff, AZ
Period	7/26/04 → 7/30/04

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.1993997

Cite this

Compositional dependence of critical point transitions in Ge _1-xSn _x alloys. / Cook, Candi S.; D'Costa, Vijay; Kouvetakis, John et al.
PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 65-66 (AIP Conference Proceedings; Vol. 772).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Cook, CS, D'Costa, V, Kouvetakis, J, Zollner, S & Menendez, J 2005, Compositional dependence of critical point transitions in Ge _1-xSn _x alloys. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 65-66, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 7/26/04. https://doi.org/10.1063/1.1993997

@inproceedings{8eeb79c037b44ffaa18239e8ae77aeb1,

title = "Compositional dependence of critical point transitions in Ge 1-xSn x alloys",

abstract = "The compositional dependence of the E 1, E 1+Δ 1, E 0′, and E 2 optical transition energies in Ge 1-xSn x alloys has been measured in the 0 < x < 0.18 range. Deviations from linearity are clearly observed and characterized by a bowing parameter b. The value of this parameter is much larger in Ge 1-xSn x alloys than in the isoelectronic Si 1-xGe x system.",

author = "Cook, {Candi S.} and Vijay D'Costa and John Kouvetakis and Stefan Zollner and Jose Menendez",

year = "2005",

month = jun,

day = "30",

doi = "10.1063/1.1993997",

language = "English (US)",

isbn = "0735402574",

series = "AIP Conference Proceedings",

pages = "65--66",

booktitle = "PHYSICS OF SEMICONDUCTORS",

note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",

}

TY - GEN

T1 - Compositional dependence of critical point transitions in Ge 1-xSn x alloys

AU - Cook, Candi S.

AU - D'Costa, Vijay

AU - Kouvetakis, John

AU - Zollner, Stefan

AU - Menendez, Jose

PY - 2005/6/30

Y1 - 2005/6/30

N2 - The compositional dependence of the E 1, E 1+Δ 1, E 0′, and E 2 optical transition energies in Ge 1-xSn x alloys has been measured in the 0 < x < 0.18 range. Deviations from linearity are clearly observed and characterized by a bowing parameter b. The value of this parameter is much larger in Ge 1-xSn x alloys than in the isoelectronic Si 1-xGe x system.

AB - The compositional dependence of the E 1, E 1+Δ 1, E 0′, and E 2 optical transition energies in Ge 1-xSn x alloys has been measured in the 0 < x < 0.18 range. Deviations from linearity are clearly observed and characterized by a bowing parameter b. The value of this parameter is much larger in Ge 1-xSn x alloys than in the isoelectronic Si 1-xGe x system.

UR - http://www.scopus.com/inward/record.url?scp=33749469999&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749469999&partnerID=8YFLogxK

U2 - 10.1063/1.1993997

DO - 10.1063/1.1993997

M3 - Conference contribution

AN - SCOPUS:33749469999

SN - 0735402574

SN - 9780735402577

T3 - AIP Conference Proceedings

SP - 65

EP - 66

BT - PHYSICS OF SEMICONDUCTORS

T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27

Y2 - 26 July 2004 through 30 July 2004

ER -