Compositional dependence of critical point transitions in Ge 1-xSn x alloys

Candi S. Cook, Vijay D'Costa, John Kouvetakis, Stefan Zollner, Jose Menendez

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The compositional dependence of the E 1, E 11, E 0′, and E 2 optical transition energies in Ge 1-xSn x alloys has been measured in the 0 < x < 0.18 range. Deviations from linearity are clearly observed and characterized by a bowing parameter b. The value of this parameter is much larger in Ge 1-xSn x alloys than in the isoelectronic Si 1-xGe x system.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages65-66
Number of pages2
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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