Compositional analysis of GaAs/AlGaAs heterostructures using quantitative scanning transmission electron microscopy

H. Kauko; C. L. Zheng; Y. Zhu; S. Glanvill; C. Dwyer; A. M. Munshi; B. O. Fimland; A. T.J. Van Helvoort; J. Etheridge

doi:10.1063/1.4838556

Compositional analysis of GaAs/AlGaAs heterostructures using quantitative scanning transmission electron microscopy

H. Kauko, C. L. Zheng, Y. Zhu, S. Glanvill, C. Dwyer, A. M. Munshi, B. O. Fimland, A. T.J. Van Helvoort, J. Etheridge

Physics

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17 Scopus citations

Abstract

We demonstrate a method for compositional mapping of Al_xGa _1-xAs heterostructures with high accuracy and unit cell spatial resolution using quantitative high angle annular dark field scanning transmission electron microscopy. The method is low dose relative to spectroscopic methods and insensitive to the effective source size and higher order lens aberrations. We apply the method to study the spatial variation in Al concentration in cross-sectioned GaAs/AlGaAs core-shell nanowires and quantify the concentration in the Al-rich radial band and the AlGaAs shell segments.

Original language	English (US)
Article number	232111
Journal	Applied Physics Letters
Volume	103
Issue number	23
DOIs	https://doi.org/10.1063/1.4838556
State	Published - Dec 2 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4838556

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@article{4f29a46fd7d2427db57866b250da023a,

title = "Compositional analysis of GaAs/AlGaAs heterostructures using quantitative scanning transmission electron microscopy",

abstract = "We demonstrate a method for compositional mapping of AlxGa 1-xAs heterostructures with high accuracy and unit cell spatial resolution using quantitative high angle annular dark field scanning transmission electron microscopy. The method is low dose relative to spectroscopic methods and insensitive to the effective source size and higher order lens aberrations. We apply the method to study the spatial variation in Al concentration in cross-sectioned GaAs/AlGaAs core-shell nanowires and quantify the concentration in the Al-rich radial band and the AlGaAs shell segments.",

author = "H. Kauko and Zheng, {C. L.} and Y. Zhu and S. Glanvill and C. Dwyer and Munshi, {A. M.} and Fimland, {B. O.} and {Van Helvoort}, {A. T.J.} and J. Etheridge",

note = "Funding Information: Support is acknowledged from the Norwegian Ph.D. Network on Nanotechnology for Microsystems (H.K.), the Australian Research Council Grant No. DP110104734 (C.D. and J.E.) and LE0454166 (J.E.) and the “RENERGI” program of the Research Council of Norway Grant No. 190871 (A.M.M. and B.O.F.). Copyright: Copyright 2013 Elsevier B.V., All rights reserved.",

year = "2013",

month = dec,

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doi = "10.1063/1.4838556",

language = "English (US)",

volume = "103",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Compositional analysis of GaAs/AlGaAs heterostructures using quantitative scanning transmission electron microscopy

AU - Kauko, H.

AU - Zheng, C. L.

AU - Zhu, Y.

AU - Glanvill, S.

AU - Dwyer, C.

AU - Munshi, A. M.

AU - Fimland, B. O.

AU - Van Helvoort, A. T.J.

AU - Etheridge, J.

N1 - Funding Information: Support is acknowledged from the Norwegian Ph.D. Network on Nanotechnology for Microsystems (H.K.), the Australian Research Council Grant No. DP110104734 (C.D. and J.E.) and LE0454166 (J.E.) and the “RENERGI” program of the Research Council of Norway Grant No. 190871 (A.M.M. and B.O.F.). Copyright: Copyright 2013 Elsevier B.V., All rights reserved.

PY - 2013/12/2

Y1 - 2013/12/2

N2 - We demonstrate a method for compositional mapping of AlxGa 1-xAs heterostructures with high accuracy and unit cell spatial resolution using quantitative high angle annular dark field scanning transmission electron microscopy. The method is low dose relative to spectroscopic methods and insensitive to the effective source size and higher order lens aberrations. We apply the method to study the spatial variation in Al concentration in cross-sectioned GaAs/AlGaAs core-shell nanowires and quantify the concentration in the Al-rich radial band and the AlGaAs shell segments.

AB - We demonstrate a method for compositional mapping of AlxGa 1-xAs heterostructures with high accuracy and unit cell spatial resolution using quantitative high angle annular dark field scanning transmission electron microscopy. The method is low dose relative to spectroscopic methods and insensitive to the effective source size and higher order lens aberrations. We apply the method to study the spatial variation in Al concentration in cross-sectioned GaAs/AlGaAs core-shell nanowires and quantify the concentration in the Al-rich radial band and the AlGaAs shell segments.

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U2 - 10.1063/1.4838556

DO - 10.1063/1.4838556

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 232111

ER -

Compositional analysis of GaAs/AlGaAs heterostructures using quantitative scanning transmission electron microscopy

Abstract

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