Composition and growth direction control of epitaxial vapor-liquid-solid- grown SiGe nanowires

Eric Dailey, Prashanth Madras, Jeffery Drucker

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

The composition and growth direction of epitaxial SiGe alloy nanowires (NWs) grown via the Au-catalyzed vapor-liquid-solid technique can be controlled by varying growth conditions. These alloy NWs can adopt either Si-like or Ge-like characteristics. Si-like growth is characterized by Au-coated 〈 111 〉 -oriented NWs for low pressure growth and Au-free 〈 112 〉 -oriented NWs for higher pressure growth. Ge-like NWs always follow 〈 111 〉 and grow with Au-free sidewalls.

Original languageEnglish (US)
Article number143106
JournalApplied Physics Letters
Volume97
Issue number14
DOIs
StatePublished - Oct 4 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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