The composition and growth direction of epitaxial SiGe alloy nanowires (NWs) grown via the Au-catalyzed vapor-liquid-solid technique can be controlled by varying growth conditions. These alloy NWs can adopt either Si-like or Ge-like characteristics. Si-like growth is characterized by Au-coated 〈 111 〉 -oriented NWs for low pressure growth and Au-free 〈 112 〉 -oriented NWs for higher pressure growth. Ge-like NWs always follow 〈 111 〉 and grow with Au-free sidewalls.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)