Composition and conduction properties of silicon nitrides deposited by plasma-enhanced ultra-high-vacuum chemical vapour deposition

Engineering & Materials Science

• Ultrahigh vacuum 100%
• Silicon nitride 77%
• Chemical vapor deposition 74%
• Plasmas 58%
• Chemical analysis 41%
• Deposits 25%
• Nitrogen 23%
• Electron cyclotron resonance 22%
• Plasma enhanced chemical vapor deposition 18%
• Refractive index 16%
• Silanes 16%
• X ray photoelectron spectroscopy 15%
• Leakage currents 13%
• Fluxes 10%
• Hydrogen 10%
• Silicon 10%
• Temperature 5%

Physics & Astronomy

• ultrahigh vacuum 63%
• silicon nitrides 62%
• vapor deposition 48%
• conduction 42%
• deposits 22%
• nitrogen 18%
• electron cyclotron resonance 13%
• silanes 13%
• leakage 10%
• photoelectron spectroscopy 10%
• refractivity 8%
• hydrogen 7%
• silicon 6%
• x rays 5%
• temperature 3%

Chemical Compounds

• Nitride 61%
• Chemical Vapour Deposition 57%
• Liquid Film 30%
• Electron Cyclotron Resonance 19%
• Leakage Current 16%
• Nitrogen 15%
• Plasma Enhanced Chemical Vapour Deposition 15%
• Refractive Index 12%
• Silane 12%
• X-Ray Photoelectron Spectroscopy 8%
• Hydrogen 6%