Composition and conduction properties of silicon nitrides deposited by plasma-enhanced ultra-high-vacuum chemical vapour deposition

S. N. Mohammad, Meng Tao, D. G. Park, A. E. Botchkarev, D. Li, H. Morkoç

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Some fundamental properties of silicon nitride deposition by electron cyclotron resonance plasma-enhanced chemical vapour deposition have been studied. Silane and nitrogen were used to deposit the layers used for the study. The deposition temperature was maintained above 500°C in order to ensure that the hydrogen content of the film was marginally small, which was confirmed by X-ray photoelectron spectroscopy measurement. It was observed that, in order to deposit stoichiometric Si3N4 films, the flux of the volatile component nitrogen must be increased until the [N2]/[SiH4] ratio is well above 25. The leakage currents in both silicon-rich and stoichiometric films were investigated. The measured refractive index of the films was used to highlight the role of various species during the deposition of the films.

Original languageEnglish (US)
Pages (from-to)817-831
Number of pages15
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume73
Issue number5
StatePublished - May 1996
Externally publishedYes

Fingerprint

Ultrahigh vacuum
Silicon nitride
silicon nitrides
ultrahigh vacuum
Chemical vapor deposition
vapor deposition
Plasmas
conduction
Chemical analysis
Nitrogen
Deposits
deposits
Silanes
nitrogen
Electron cyclotron resonance
Silicon
Plasma enhanced chemical vapor deposition
electron cyclotron resonance
Leakage currents
silanes

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "Some fundamental properties of silicon nitride deposition by electron cyclotron resonance plasma-enhanced chemical vapour deposition have been studied. Silane and nitrogen were used to deposit the layers used for the study. The deposition temperature was maintained above 500°C in order to ensure that the hydrogen content of the film was marginally small, which was confirmed by X-ray photoelectron spectroscopy measurement. It was observed that, in order to deposit stoichiometric Si3N4 films, the flux of the volatile component nitrogen must be increased until the [N2]/[SiH4] ratio is well above 25. The leakage currents in both silicon-rich and stoichiometric films were investigated. The measured refractive index of the films was used to highlight the role of various species during the deposition of the films.",
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T1 - Composition and conduction properties of silicon nitrides deposited by plasma-enhanced ultra-high-vacuum chemical vapour deposition

AU - Mohammad, S. N.

AU - Tao, Meng

AU - Park, D. G.

AU - Botchkarev, A. E.

AU - Li, D.

AU - Morkoç, H.

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AB - Some fundamental properties of silicon nitride deposition by electron cyclotron resonance plasma-enhanced chemical vapour deposition have been studied. Silane and nitrogen were used to deposit the layers used for the study. The deposition temperature was maintained above 500°C in order to ensure that the hydrogen content of the film was marginally small, which was confirmed by X-ray photoelectron spectroscopy measurement. It was observed that, in order to deposit stoichiometric Si3N4 films, the flux of the volatile component nitrogen must be increased until the [N2]/[SiH4] ratio is well above 25. The leakage currents in both silicon-rich and stoichiometric films were investigated. The measured refractive index of the films was used to highlight the role of various species during the deposition of the films.

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