Complicated basins in external-cavity semiconductor lasers

Awadhesh Prasad, Ying-Cheng Lai, Athanasios Gavrielides, Vassilios Kovanis

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

We demonstrate that complicated basins of attraction can occur in time-delay coupled, external-cavity semiconductor lasers. In particular, we find that there can be multiple coexisting attractors associated with low-frequency fluctuations in the laser power output, and prediction of the asymptotic attractor for specific initial conditions is practically impossible.

Original languageEnglish (US)
Pages (from-to)44-50
Number of pages7
JournalPhysics Letters, Section A: General, Atomic and Solid State Physics
Volume314
Issue number1-2
DOIs
StatePublished - Jul 21 2003

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semiconductor lasers
cavities
attraction
time lag
low frequencies
output
predictions
lasers

Keywords

  • Nonlinear dynamics
  • Optical chaos
  • Semiconductor lasers

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Complicated basins in external-cavity semiconductor lasers. / Prasad, Awadhesh; Lai, Ying-Cheng; Gavrielides, Athanasios; Kovanis, Vassilios.

In: Physics Letters, Section A: General, Atomic and Solid State Physics, Vol. 314, No. 1-2, 21.07.2003, p. 44-50.

Research output: Contribution to journalArticle

Prasad, Awadhesh ; Lai, Ying-Cheng ; Gavrielides, Athanasios ; Kovanis, Vassilios. / Complicated basins in external-cavity semiconductor lasers. In: Physics Letters, Section A: General, Atomic and Solid State Physics. 2003 ; Vol. 314, No. 1-2. pp. 44-50.
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