Complex and incommensurate ordering in Al 0.72 Ga 0.28N thin films grown by plasma-assisted molecular beam epitaxy

Yiyi Wang, Ahmet S. Özcan, Karl F. Ludwig, Anirban Bhattacharyya, T. D. Moustakas, Lin Zhou, David Smith

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30 Scopus citations

Abstract

Structures with incommensurate ordering along the [0001] direction are observed in wurtzite Al0.72 Ga0.28 N alloys grown by plasma-assisted molecular beam epitaxy on c -plane sapphire. Films grown in environments with group-III/N ratios greater than 1 exhibit ordered superlattice structures that are incommensurate with the wurtzite crystal lattice. In contrast, films grown under nitrogen-rich conditions exhibit ordered structures with a periodicity of four cation-N monolayers. The increasing complexity of the ordering with increasing Ga-rich growth environment suggests that the ordering is related to the presence of a Ga overlayer believed to exist on the surface of the growing film.

Original languageEnglish (US)
Article number181915
JournalApplied Physics Letters
Volume88
Issue number18
DOIs
StatePublished - May 1 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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