Abstract

Silicon-on-insulator (SOI) metal-semiconductor field-effect transistors (MESFETs) with complementary n-and p-type channels have been fabricated using a commercial 45-nm CMOS process. The current drive and transconductance of the n-MESFET is approximately three times larger than that of the p-MESFET due to the higher electron mobility. Both devices operate in depletion mode with the threshold voltage of the n-MESFET being approximately-0.4 V, while that of the p-MESFET is ∼ 0.3 V. The MESFETs have multiple gigahertz cutoff frequencies and can withstand drain bias in excess of 4 V making them attractive for analog-and mixed-signal applications that require higher operating voltages than the baseline CMOS. The p-MESFET has higher leakage current due to the lower Schottky barrier height to the p-type channel.

Original languageEnglish (US)
Article number6963317
Pages (from-to)14-16
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number1
DOIs
StatePublished - Jan 1 2015

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Keywords

  • CMOS processing
  • MESFETs
  • Schottky junction
  • partially-depleted
  • silicon-on-insulator

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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