Abstract
Silicon-on-insulator (SOI) metal-semiconductor field-effect transistors (MESFETs) with complementary n-and p-type channels have been fabricated using a commercial 45-nm CMOS process. The current drive and transconductance of the n-MESFET is approximately three times larger than that of the p-MESFET due to the higher electron mobility. Both devices operate in depletion mode with the threshold voltage of the n-MESFET being approximately-0.4 V, while that of the p-MESFET is ∼ 0.3 V. The MESFETs have multiple gigahertz cutoff frequencies and can withstand drain bias in excess of 4 V making them attractive for analog-and mixed-signal applications that require higher operating voltages than the baseline CMOS. The p-MESFET has higher leakage current due to the lower Schottky barrier height to the p-type channel.
Original language | English (US) |
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Article number | 6963317 |
Pages (from-to) | 14-16 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 36 |
Issue number | 1 |
DOIs | |
State | Published - Jan 1 2015 |
Keywords
- CMOS processing
- MESFETs
- Schottky junction
- partially-depleted
- silicon-on-insulator
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering