Summary form only given. A complementary transistor structure is discussed which integrates a p-MODFET and an n-heterojunction-barrier(HB) MESFET based on the (Al,Ga)As material system. The improvement in the low-temperature transconductance of the p-MODFET over that of comparable bulk p-channel FETs, together with the excellent current-voltage characteristics realized for both the p-MODFET and the n-HB MESFET, makes this an attractive approach for the development of ultra-low-power, high speed complementary logic circuits.
|Original language||English (US)|
|Title of host publication||Technical Digest - International Electron Devices Meeting|
|Number of pages||2|
|State||Published - 1984|
ASJC Scopus subject areas
- Electrical and Electronic Engineering