COMPLEMENTARY P-MODFET AND N-HB MESFET (Al,Ga)As FET'S.

Richard Kiehl, A. C. Gossard, W. Wiegmann, D. E. Ibbotson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Summary form only given. A complementary transistor structure is discussed which integrates a p-MODFET and an n-heterojunction-barrier(HB) MESFET based on the (Al,Ga)As material system. The improvement in the low-temperature transconductance of the p-MODFET over that of comparable bulk p-channel FETs, together with the excellent current-voltage characteristics realized for both the p-MODFET and the n-HB MESFET, makes this an attractive approach for the development of ultra-low-power, high speed complementary logic circuits.

Original languageEnglish (US)
Title of host publicationTechnical Digest - International Electron Devices Meeting
PublisherIEEE
Pages854-855
Number of pages2
StatePublished - 1984
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Kiehl, R., Gossard, A. C., Wiegmann, W., & Ibbotson, D. E. (1984). COMPLEMENTARY P-MODFET AND N-HB MESFET (Al,Ga)As FET'S. In Technical Digest - International Electron Devices Meeting (pp. 854-855). IEEE.