A complementary transistor structure that utilizes a p-channel modulation-doped FET (p-MODFET) to produce improved p-channel characteristics if reported for the first time. The structure also includes a new type of n-channel MESFET in which the electrons are confined by an n-p heterojunction barrier (n-HB MESFET). The complementary transistor pair is fabricated on a novel MBE-grown n-GaAs/p-(Al,Ga)As/l-GaAs heterostructure. The experimental current-voltage characteristics are presented and demonstrate that this is a promising approach for the development of GaAs-based high-speed complementary logic circuits.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering