Compatibility of cobalt and chromium depletion gates with RPECVD upper gate oxide for silicon-based nanostructures

M. J. Rack; A. D. Gunther; M. Khoury; Dragica Vasileska; D. K. Ferry; M. Sidorov

doi:10.1088/0268-1242/13/8A/022

Compatibility of cobalt and chromium depletion gates with RPECVD upper gate oxide for silicon-based nanostructures

M. J. Rack, A. D. Gunther, M. Khoury, Dragica Vasileska, D. K. Ferry, M. Sidorov

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Three-dimensional confinement of electrons in silicon-based nanodevices may be achieved using a dual gate structure to confine carriers laterally in a 2D MOSFET inversion layer. We have investigated the temperature stability of cobalt and chromium for thin depletion gates, using remote plasma enhanced chemical vapour deposited (RPECVD) SiO₂ for the deposited dielectric. The thermal stability of the oxide/metal/oxide structure for various annealing regimes was studied by Auger electron spectroscopy sputter profiling and high-resolution cross-sectional transmission electron microscopy. Improvements to the RPECVD oxide for comparable annealing were characterized by electrical measurements on MOS capacitors made from deposited RPECVD oxide.

Original language	English (US)
Pages (from-to)	A71-A74
Journal	Semiconductor Science and Technology
Volume	13
Issue number	8 SUPPL. A
DOIs	https://doi.org/10.1088/0268-1242/13/8A/022
State	Published - Jan 1 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/13/8A/022

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title = "Compatibility of cobalt and chromium depletion gates with RPECVD upper gate oxide for silicon-based nanostructures",

abstract = "Three-dimensional confinement of electrons in silicon-based nanodevices may be achieved using a dual gate structure to confine carriers laterally in a 2D MOSFET inversion layer. We have investigated the temperature stability of cobalt and chromium for thin depletion gates, using remote plasma enhanced chemical vapour deposited (RPECVD) SiO2 for the deposited dielectric. The thermal stability of the oxide/metal/oxide structure for various annealing regimes was studied by Auger electron spectroscopy sputter profiling and high-resolution cross-sectional transmission electron microscopy. Improvements to the RPECVD oxide for comparable annealing were characterized by electrical measurements on MOS capacitors made from deposited RPECVD oxide.",

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T1 - Compatibility of cobalt and chromium depletion gates with RPECVD upper gate oxide for silicon-based nanostructures

AU - Rack, M. J.

AU - Gunther, A. D.

AU - Khoury, M.

AU - Vasileska, Dragica

AU - Ferry, D. K.

AU - Sidorov, M.

PY - 1998/1/1

Y1 - 1998/1/1

N2 - Three-dimensional confinement of electrons in silicon-based nanodevices may be achieved using a dual gate structure to confine carriers laterally in a 2D MOSFET inversion layer. We have investigated the temperature stability of cobalt and chromium for thin depletion gates, using remote plasma enhanced chemical vapour deposited (RPECVD) SiO2 for the deposited dielectric. The thermal stability of the oxide/metal/oxide structure for various annealing regimes was studied by Auger electron spectroscopy sputter profiling and high-resolution cross-sectional transmission electron microscopy. Improvements to the RPECVD oxide for comparable annealing were characterized by electrical measurements on MOS capacitors made from deposited RPECVD oxide.

AB - Three-dimensional confinement of electrons in silicon-based nanodevices may be achieved using a dual gate structure to confine carriers laterally in a 2D MOSFET inversion layer. We have investigated the temperature stability of cobalt and chromium for thin depletion gates, using remote plasma enhanced chemical vapour deposited (RPECVD) SiO2 for the deposited dielectric. The thermal stability of the oxide/metal/oxide structure for various annealing regimes was studied by Auger electron spectroscopy sputter profiling and high-resolution cross-sectional transmission electron microscopy. Improvements to the RPECVD oxide for comparable annealing were characterized by electrical measurements on MOS capacitors made from deposited RPECVD oxide.

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Compatibility of cobalt and chromium depletion gates with RPECVD upper gate oxide for silicon-based nanostructures

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