Comparison of scanning laser annealing and microwave annealing for As⁺ implanted Si

Chemical Compounds

• Laser Annealing 100%
• Doping Material 48%
• Microwave 45%
• Annealing 43%
• Implanted Ion 22%
• Diffusion 14%
• Semiconductor 6%
• Reaction Activation Energy 5%
• Energy 3%
• Surface 2%

Engineering & Materials Science

• Annealing 55%
• Microwaves 48%
• Scanning 42%
• Lasers 42%
• Doping (additives) 33%
• Chemical activation 7%
• Ion sources 6%
• Energy absorption 4%
• Activation energy 4%
• Ions 3%
• Semiconductor materials 3%
• Transistors 3%
• Fabrication 3%
• Heating 3%

Physics & Astronomy

• laser annealing 67%
• microwaves 37%
• scanning 34%
• annealing 33%
• activation 12%
• junction transistors 10%
• energy absorption 8%
• ions 7%
• flux density 6%
• wafers 5%
• activation energy 5%
• heating 4%
• fabrication 4%