Comparison of scanning laser annealing and microwave annealing for As+ implanted Si

Zhao Zhao, Joe Hilman, Manny Oropeza, Qiong Nian, Terry L. Alford

Research output: Contribution to journalArticle

Abstract

Laser annealing and microwave (MW) annealing are rapid annealing techniques that can be used for postannealing of ion implanted semiconductors. In this study, laser annealing and MW annealing of As+ implanted Si are compared in terms of dopant activation, energy absorption, recrystallization, and dopant diffusion. Laser annealing caused similar recrystallization and a slightly higher dopant activation than MW annealing did, at the same time, the energy density absorbed during laser annealing is ∼1/7 lower than during MW annealing, due to surface heating. Rapid dopant activation and negligible dopant diffusion were achieved in the MW annealed sample. This indicates that MW annealing is a promising method for annealing ion implanted source, drain, and channel regions for shallow-junction transistor fabrication. On the other hand, laser annealing results in significant but uniform dopant diffusion, and therefore, laser annealing appears to be beneficial for quickly forming deep wells with uniform dopant concentrations for small scale wafer.

LanguageEnglish (US)
Article number011202
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume35
Issue number1
DOIs
StatePublished - Jan 1 2017
Externally publishedYes

Fingerprint

laser annealing
Microwaves
Annealing
Scanning
microwaves
annealing
scanning
Lasers
Doping (additives)
activation
junction transistors
energy absorption
ions
Chemical activation
flux density
wafers
activation energy
fabrication
heating
Energy absorption

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Comparison of scanning laser annealing and microwave annealing for As+ implanted Si. / Zhao, Zhao; Hilman, Joe; Oropeza, Manny; Nian, Qiong; Alford, Terry L.

In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 35, No. 1, 011202, 01.01.2017.

Research output: Contribution to journalArticle

@article{98d921593ab64fd694558fe9be0bb037,
title = "Comparison of scanning laser annealing and microwave annealing for As+ implanted Si",
abstract = "Laser annealing and microwave (MW) annealing are rapid annealing techniques that can be used for postannealing of ion implanted semiconductors. In this study, laser annealing and MW annealing of As+ implanted Si are compared in terms of dopant activation, energy absorption, recrystallization, and dopant diffusion. Laser annealing caused similar recrystallization and a slightly higher dopant activation than MW annealing did, at the same time, the energy density absorbed during laser annealing is ∼1/7 lower than during MW annealing, due to surface heating. Rapid dopant activation and negligible dopant diffusion were achieved in the MW annealed sample. This indicates that MW annealing is a promising method for annealing ion implanted source, drain, and channel regions for shallow-junction transistor fabrication. On the other hand, laser annealing results in significant but uniform dopant diffusion, and therefore, laser annealing appears to be beneficial for quickly forming deep wells with uniform dopant concentrations for small scale wafer.",
author = "Zhao Zhao and Joe Hilman and Manny Oropeza and Qiong Nian and Alford, {Terry L.}",
year = "2017",
month = "1",
day = "1",
doi = "10.1116/1.4972051",
language = "English (US)",
volume = "35",
journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",
issn = "2166-2746",
publisher = "AVS Science and Technology Society",
number = "1",

}

TY - JOUR

T1 - Comparison of scanning laser annealing and microwave annealing for As+ implanted Si

AU - Zhao,Zhao

AU - Hilman,Joe

AU - Oropeza,Manny

AU - Nian,Qiong

AU - Alford,Terry L.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - Laser annealing and microwave (MW) annealing are rapid annealing techniques that can be used for postannealing of ion implanted semiconductors. In this study, laser annealing and MW annealing of As+ implanted Si are compared in terms of dopant activation, energy absorption, recrystallization, and dopant diffusion. Laser annealing caused similar recrystallization and a slightly higher dopant activation than MW annealing did, at the same time, the energy density absorbed during laser annealing is ∼1/7 lower than during MW annealing, due to surface heating. Rapid dopant activation and negligible dopant diffusion were achieved in the MW annealed sample. This indicates that MW annealing is a promising method for annealing ion implanted source, drain, and channel regions for shallow-junction transistor fabrication. On the other hand, laser annealing results in significant but uniform dopant diffusion, and therefore, laser annealing appears to be beneficial for quickly forming deep wells with uniform dopant concentrations for small scale wafer.

AB - Laser annealing and microwave (MW) annealing are rapid annealing techniques that can be used for postannealing of ion implanted semiconductors. In this study, laser annealing and MW annealing of As+ implanted Si are compared in terms of dopant activation, energy absorption, recrystallization, and dopant diffusion. Laser annealing caused similar recrystallization and a slightly higher dopant activation than MW annealing did, at the same time, the energy density absorbed during laser annealing is ∼1/7 lower than during MW annealing, due to surface heating. Rapid dopant activation and negligible dopant diffusion were achieved in the MW annealed sample. This indicates that MW annealing is a promising method for annealing ion implanted source, drain, and channel regions for shallow-junction transistor fabrication. On the other hand, laser annealing results in significant but uniform dopant diffusion, and therefore, laser annealing appears to be beneficial for quickly forming deep wells with uniform dopant concentrations for small scale wafer.

UR - http://www.scopus.com/inward/record.url?scp=85006753276&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85006753276&partnerID=8YFLogxK

U2 - 10.1116/1.4972051

DO - 10.1116/1.4972051

M3 - Article

VL - 35

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

T2 - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

SN - 2166-2746

IS - 1

M1 - 011202

ER -