Comparison of high voltage, vertical geometry Ga2O3 rectifiers with GaN and SiC

J. C. Yang, Chaker Fares, P. H. Carey, Minghan Man, Fan Ren, Marko Tadjer, Y. T. Chen, Yu Te Liao, Chin Wei Chang, Jenshan Lin, Ribhu Sharma, Mark E. Law, Peter E. Raad, Pavel L. Komarov, David J. Smith, Akito Kuramata, S. J. Pearton

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

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Engineering & Materials Science