Comparison of high voltage, vertical geometry Ga2O3 rectifiers with GaN and SiC

J. C. Yang, Chaker Fares, P. H. Carey, Minghan Man, Fan Ren, Marko Tadjer, Y. T. Chen, Yu Te Liao, Chin Wei Chang, Jenshan Lin, Ribhu Sharma, Mark E. Law, Peter E. Raad, Pavel L. Komarov, David J. Smith, Akito Kuramata, S. J. Pearton

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Ga2O3 is a candidate for power electronics due to its large bandgap, controllable doping and availability of large diameter, inexpensive substrates. These include power conditioning systems, pulsed power for avionics and electric ships, solid-state drivers for heavy electric motors and advanced power management and control electronics. There are cases where the performance exceeds the theoretical values for SiC. Existing Si, SiC (vertical devices), and heteroepitaxial GaN (lateral devices) enjoy advantages in terms of process maturity, especially for Si, where devices such as superjunctions which surpass the unipolar "limit". Continued development of low defect substrates, optimized epi growth and device design and processing methods for Ga2O3 are required to push the experimental results closer to their theoretical values. The actual experimental value of Vb is well below the theoretical predictions. Thermal management is a key issue in Ga2O3 devices and initial studies have appeared on both the experimental and theoretical fronts.

Original languageEnglish (US)
Title of host publicationGallium Nitride and Silicon Carbide Power Technologies 9
EditorsM. Dudley, B. Raghothamachar, N. Ohtani, M. Bakowski, K. Shenai
PublisherElectrochemical Society Inc.
Number of pages10
ISBN (Print)9781607688815
StatePublished - 2019
EventSymposium on Gallium Nitride and Silicon Carbide Power Technologies 9 - 236th ECS Meeting - Atlanta, United States
Duration: Oct 13 2019Oct 17 2019

Publication series

NameECS Transactions
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862


ConferenceSymposium on Gallium Nitride and Silicon Carbide Power Technologies 9 - 236th ECS Meeting
Country/TerritoryUnited States

ASJC Scopus subject areas

  • Engineering(all)


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