The carbon concentrations of chemical vapor deposition grown Si1-x-yGexCy (0.25 < x < 0.37 and 0.01 < y0.12) layers on (100) Si with uniform composition profiles were quantified by two ion analysis techniques. Measurements made with backscattering spectrometry using a 4.295 MeV He2+ incident ion were compared to compositions predicted by elastic recoil detection (ERD) using a 24 MeV Si5+ incident ion. To enhance the carbon scattering cross section for the backscattering measurements, the 4.265 MeV 12C(α, α)12C elastic resonance reaction was used. The carbon concentrations of the films were calculated by integrating the resonant scattering cross section using the energy width of the layer as the limits of integration. The results of this backscattering analysis technique were compared to the predicted carbon concentrations obtained by ERD. It was found that the predictions of these techniques correlated within the uncertainty of each method.
|Original language||English (US)|
|Number of pages||4|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|State||Published - Sep 1996|
ASJC Scopus subject areas
- Nuclear and High Energy Physics