Comparison of contemporary CMOS ring oscillators

Dean A. Badillo, Sayfe Kiaei

Research output: Chapter in Book/Report/Conference proceedingConference contribution

19 Scopus citations

Abstract

This work presents measured data an d analysis accurately comparing three, four-stage ring oscillators. The delay cell topologies considered here include the, linear source coupled, and two saturating types. Each oscillator is fabricated concurrently in a 1.8V, 18μm CMOS process and is characterized for phase noise, power consumption and tuning range.

Original languageEnglish (US)
Title of host publicationIEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
EditorsY. Deval
Pages281-284
Number of pages4
StatePublished - 2004
EventDigest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Fort Worth, TX, United States
Duration: Jun 6 2004Jun 8 2004

Other

OtherDigest of Papers - 2004 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
CountryUnited States
CityFort Worth, TX
Period6/6/046/8/04

Keywords

  • CMOS
  • Phase noise
  • Ring oscillators

ASJC Scopus subject areas

  • Media Technology
  • Electrical and Electronic Engineering

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  • Cite this

    Badillo, D. A., & Kiaei, S. (2004). Comparison of contemporary CMOS ring oscillators. In Y. Deval (Ed.), IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers (pp. 281-284)