The strain in epitaxial SiGeC alloy films grown on Si(001) substrates by chemical vapor deposition (CVD) is quantified. Film composition was determined by Rutherford backscattering spectrometry (RBS) and nuclear resonance analysis. The amount of substitutional C was determined by He ion channeling near a C-resonance energy. Ion channeling angular scans and X-ray diffraction space maps were used to determine the strain in the alloys. Good agreement was found between the measured values of strain and predictions based on a simple elastic theory and Vegard's law.
- Chemical vapour deposition
- Elastic theory
- Vegard's law
ASJC Scopus subject areas
- Materials Chemistry
Comparison between predicted strain values using elastic theory and experimental strain values for SiGeC alloy films grown on Si(001). / Sego, S.; Culbertson, Robert; Bair, A. E.; Alford, A. L.In: Materials Chemistry and Physics, Vol. 46, No. 2-3, 11.1996, p. 277-282.
Research output: Contribution to journal › Article