Comparison between predicted strain values using elastic theory and experimental strain values for SiGeC alloy films grown on Si(001)

S. Sego, Robert Culbertson, A. E. Bair, A. L. Alford

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The strain in epitaxial SiGeC alloy films grown on Si(001) substrates by chemical vapor deposition (CVD) is quantified. Film composition was determined by Rutherford backscattering spectrometry (RBS) and nuclear resonance analysis. The amount of substitutional C was determined by He ion channeling near a C-resonance energy. Ion channeling angular scans and X-ray diffraction space maps were used to determine the strain in the alloys. Good agreement was found between the measured values of strain and predictions based on a simple elastic theory and Vegard's law.

Original languageEnglish (US)
Pages (from-to)277-282
Number of pages6
JournalMaterials Chemistry and Physics
Volume46
Issue number2-3
DOIs
StatePublished - Nov 1996

Fingerprint

Ions
backscattering
ions
Rutherford backscattering spectroscopy
vapor deposition
Spectrometry
Chemical vapor deposition
predictions
diffraction
spectroscopy
X ray diffraction
x rays
Substrates
Chemical analysis
energy

Keywords

  • Chemical vapour deposition
  • Elastic theory
  • Strain
  • Vegard's law

ASJC Scopus subject areas

  • Materials Chemistry

Cite this

Comparison between predicted strain values using elastic theory and experimental strain values for SiGeC alloy films grown on Si(001). / Sego, S.; Culbertson, Robert; Bair, A. E.; Alford, A. L.

In: Materials Chemistry and Physics, Vol. 46, No. 2-3, 11.1996, p. 277-282.

Research output: Contribution to journalArticle

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