Comparison between predicted strain values using elastic theory and experimental strain values for SiGeC alloy films grown on Si(001)

S. Sego; Robert Culbertson; A. E. Bair; A. L. Alford

doi:10.1016/S0254-0584(96)01811-1

Comparison between predicted strain values using elastic theory and experimental strain values for SiGeC alloy films grown on Si(001)

S. Sego, Robert Culbertson, A. E. Bair, A. L. Alford

Physics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The strain in epitaxial SiGeC alloy films grown on Si(001) substrates by chemical vapor deposition (CVD) is quantified. Film composition was determined by Rutherford backscattering spectrometry (RBS) and nuclear resonance analysis. The amount of substitutional C was determined by He ion channeling near a C-resonance energy. Ion channeling angular scans and X-ray diffraction space maps were used to determine the strain in the alloys. Good agreement was found between the measured values of strain and predictions based on a simple elastic theory and Vegard's law.

Original language	English (US)
Pages (from-to)	277-282
Number of pages	6
Journal	Materials Chemistry and Physics
Volume	46
Issue number	2-3
DOIs	https://doi.org/10.1016/S0254-0584(96)01811-1
State	Published - Nov 1996

Keywords

Chemical vapour deposition
Elastic theory
Strain
Vegard's law

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics

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10.1016/S0254-0584(96)01811-1

Cite this

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title = "Comparison between predicted strain values using elastic theory and experimental strain values for SiGeC alloy films grown on Si(001)",

abstract = "The strain in epitaxial SiGeC alloy films grown on Si(001) substrates by chemical vapor deposition (CVD) is quantified. Film composition was determined by Rutherford backscattering spectrometry (RBS) and nuclear resonance analysis. The amount of substitutional C was determined by He ion channeling near a C-resonance energy. Ion channeling angular scans and X-ray diffraction space maps were used to determine the strain in the alloys. Good agreement was found between the measured values of strain and predictions based on a simple elastic theory and Vegard's law.",

keywords = "Chemical vapour deposition, Elastic theory, Strain, Vegard's law",

author = "S. Sego and Robert Culbertson and Bair, {A. E.} and Alford, {A. L.}",

note = "Funding Information: This work was supported by AFOSR (ARPA) Award F49620-93-C-0018. McD. Robinson and R. Westhoff at Lawrence Semiconductor Research Laboratory Inc., AZ, are acknowledged for providing the CVD samples.",

year = "1996",

month = nov,

doi = "10.1016/S0254-0584(96)01811-1",

language = "English (US)",

volume = "46",

pages = "277--282",

journal = "Materials Chemistry and Physics",

issn = "0254-0584",

publisher = "Elsevier BV",

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T1 - Comparison between predicted strain values using elastic theory and experimental strain values for SiGeC alloy films grown on Si(001)

AU - Sego, S.

AU - Culbertson, Robert

AU - Bair, A. E.

AU - Alford, A. L.

N1 - Funding Information: This work was supported by AFOSR (ARPA) Award F49620-93-C-0018. McD. Robinson and R. Westhoff at Lawrence Semiconductor Research Laboratory Inc., AZ, are acknowledged for providing the CVD samples.

PY - 1996/11

Y1 - 1996/11

N2 - The strain in epitaxial SiGeC alloy films grown on Si(001) substrates by chemical vapor deposition (CVD) is quantified. Film composition was determined by Rutherford backscattering spectrometry (RBS) and nuclear resonance analysis. The amount of substitutional C was determined by He ion channeling near a C-resonance energy. Ion channeling angular scans and X-ray diffraction space maps were used to determine the strain in the alloys. Good agreement was found between the measured values of strain and predictions based on a simple elastic theory and Vegard's law.

AB - The strain in epitaxial SiGeC alloy films grown on Si(001) substrates by chemical vapor deposition (CVD) is quantified. Film composition was determined by Rutherford backscattering spectrometry (RBS) and nuclear resonance analysis. The amount of substitutional C was determined by He ion channeling near a C-resonance energy. Ion channeling angular scans and X-ray diffraction space maps were used to determine the strain in the alloys. Good agreement was found between the measured values of strain and predictions based on a simple elastic theory and Vegard's law.

KW - Chemical vapour deposition

KW - Elastic theory

KW - Strain

KW - Vegard's law

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SN - 0254-0584

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JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 2-3

ER -

Comparison between predicted strain values using elastic theory and experimental strain values for SiGeC alloy films grown on Si(001)

Abstract

Keywords

ASJC Scopus subject areas

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