Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes

Yun Ji; Wei Liu; Talha Erdem; Rui Chen; Swee Tiam Tan; Zi Hui Zhang; Zhengang Ju; Xueliang Zhang; Handong Sun; Xiao Wei Sun; Yuji Zhao; Steven P. Denbaars; Shuji Nakamura; Hilmi Volkan Demir

doi:10.1063/1.4870840

Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes

Yun Ji, Wei Liu, Talha Erdem, Rui Chen, Swee Tiam Tan, Zi Hui Zhang, Zhengang Ju, Xueliang Zhang, Handong Sun, Xiao Wei Sun, Yuji Zhao, Steven P. Denbaars, Shuji Nakamura, Hilmi Volkan Demir

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30 Scopus citations

Abstract

The characteristics of electroluminescence (EL) and photoluminescence (PL) emission from GaN light-emitting diodes (LEDs) grown on (112̄2) semipolar plane and (0001) polar plane have been comparatively investigated. Through different bias-dependent shifting trends observed from the PL and time-resolved PL spectra (TRPL) for the two types of LEDs, the carrier dynamics within the multiple quantum wells (MQWs) region is systematically analyzed and the distinct field-dependent emission kinetics are revealed. Moreover, the polarization induced internal electric field has been deduced for each of the LEDs. The relatively stable emission behavior observed in the semipolar LED is attributed to the smaller polarization induced internal electric field. The study provides meaningful insight for the design of quantum well (QW) structures with high radiative recombination rates.

Original language	English (US)
Article number	143506
Journal	Applied Physics Letters
Volume	104
Issue number	14
DOIs	https://doi.org/10.1063/1.4870840
State	Published - Apr 7 2014
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Ji, Y., Liu, W., Erdem, T., Chen, R., Tiam Tan, S., Zhang, Z. H., Ju, Z., Zhang, X., Sun, H., Sun, X. W., Zhao, Y., Denbaars, S. P., Nakamura, S., & Volkan Demir, H. (2014). Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes. Applied Physics Letters, 104(14), Article 143506. https://doi.org/10.1063/1.4870840

Ji, Y, Liu, W, Erdem, T, Chen, R, Tiam Tan, S, Zhang, ZH, Ju, Z, Zhang, X, Sun, H, Sun, XW, Zhao, Y, Denbaars, SP, Nakamura, S & Volkan Demir, H 2014, 'Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes', Applied Physics Letters, vol. 104, no. 14, 143506. https://doi.org/10.1063/1.4870840

@article{32ca38f0bc6540f4b6cff7f08bbec879,

title = "Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2{\= } 2) semipolar versus (0001) polar planes",

abstract = "The characteristics of electroluminescence (EL) and photoluminescence (PL) emission from GaN light-emitting diodes (LEDs) grown on (11{\=2}2) semipolar plane and (0001) polar plane have been comparatively investigated. Through different bias-dependent shifting trends observed from the PL and time-resolved PL spectra (TRPL) for the two types of LEDs, the carrier dynamics within the multiple quantum wells (MQWs) region is systematically analyzed and the distinct field-dependent emission kinetics are revealed. Moreover, the polarization induced internal electric field has been deduced for each of the LEDs. The relatively stable emission behavior observed in the semipolar LED is attributed to the smaller polarization induced internal electric field. The study provides meaningful insight for the design of quantum well (QW) structures with high radiative recombination rates.",

author = "Yun Ji and Wei Liu and Talha Erdem and Rui Chen and {Tiam Tan}, Swee and Zhang, {Zi Hui} and Zhengang Ju and Xueliang Zhang and Handong Sun and Sun, {Xiao Wei} and Yuji Zhao and Denbaars, {Steven P.} and Shuji Nakamura and {Volkan Demir}, Hilmi",

year = "2014",

month = apr,

day = "7",

doi = "10.1063/1.4870840",

language = "English (US)",

volume = "104",

journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes

AU - Ji, Yun

AU - Liu, Wei

AU - Erdem, Talha

AU - Chen, Rui

AU - Tiam Tan, Swee

AU - Zhang, Zi Hui

AU - Ju, Zhengang

AU - Zhang, Xueliang

AU - Sun, Handong

AU - Sun, Xiao Wei

AU - Zhao, Yuji

AU - Denbaars, Steven P.

AU - Nakamura, Shuji

AU - Volkan Demir, Hilmi

PY - 2014/4/7

Y1 - 2014/4/7

N2 - The characteristics of electroluminescence (EL) and photoluminescence (PL) emission from GaN light-emitting diodes (LEDs) grown on (112̄2) semipolar plane and (0001) polar plane have been comparatively investigated. Through different bias-dependent shifting trends observed from the PL and time-resolved PL spectra (TRPL) for the two types of LEDs, the carrier dynamics within the multiple quantum wells (MQWs) region is systematically analyzed and the distinct field-dependent emission kinetics are revealed. Moreover, the polarization induced internal electric field has been deduced for each of the LEDs. The relatively stable emission behavior observed in the semipolar LED is attributed to the smaller polarization induced internal electric field. The study provides meaningful insight for the design of quantum well (QW) structures with high radiative recombination rates.

AB - The characteristics of electroluminescence (EL) and photoluminescence (PL) emission from GaN light-emitting diodes (LEDs) grown on (112̄2) semipolar plane and (0001) polar plane have been comparatively investigated. Through different bias-dependent shifting trends observed from the PL and time-resolved PL spectra (TRPL) for the two types of LEDs, the carrier dynamics within the multiple quantum wells (MQWs) region is systematically analyzed and the distinct field-dependent emission kinetics are revealed. Moreover, the polarization induced internal electric field has been deduced for each of the LEDs. The relatively stable emission behavior observed in the semipolar LED is attributed to the smaller polarization induced internal electric field. The study provides meaningful insight for the design of quantum well (QW) structures with high radiative recombination rates.

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DO - 10.1063/1.4870840

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VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 143506

ER -

Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes

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