Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes

Yun Ji, Wei Liu, Talha Erdem, Rui Chen, Swee Tiam Tan, Zi Hui Zhang, Zhengang Ju, Xueliang Zhang, Handong Sun, Xiao Wei Sun, Yuji Zhao, Steven P. Denbaars, Shuji Nakamura, Hilmi Volkan Demir

Research output: Contribution to journalArticle

25 Scopus citations

Abstract

The characteristics of electroluminescence (EL) and photoluminescence (PL) emission from GaN light-emitting diodes (LEDs) grown on (112̄2) semipolar plane and (0001) polar plane have been comparatively investigated. Through different bias-dependent shifting trends observed from the PL and time-resolved PL spectra (TRPL) for the two types of LEDs, the carrier dynamics within the multiple quantum wells (MQWs) region is systematically analyzed and the distinct field-dependent emission kinetics are revealed. Moreover, the polarization induced internal electric field has been deduced for each of the LEDs. The relatively stable emission behavior observed in the semipolar LED is attributed to the smaller polarization induced internal electric field. The study provides meaningful insight for the design of quantum well (QW) structures with high radiative recombination rates.

Original languageEnglish (US)
Article number143506
JournalApplied Physics Letters
Volume104
Issue number14
DOIs
StatePublished - Apr 7 2014
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes'. Together they form a unique fingerprint.

  • Cite this

    Ji, Y., Liu, W., Erdem, T., Chen, R., Tiam Tan, S., Zhang, Z. H., Ju, Z., Zhang, X., Sun, H., Sun, X. W., Zhao, Y., Denbaars, S. P., Nakamura, S., & Volkan Demir, H. (2014). Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (11 2 ̄ 2) semipolar versus (0001) polar planes. Applied Physics Letters, 104(14), [143506]. https://doi.org/10.1063/1.4870840