Comparative fluctuation microscopy study of medium-range order in hydrogenated amorphous silicon deposited by various methods

P. M. Voyles, Michael Treacy, H. C. Jin, J. R. Abelson, J. M. Gibson, J. Yang, S. Guha, R. S. Crandall

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

We have characterized by fluctuation electron microscopy the medium-range order of hydrogenated amorphous silicon thin films deposited by a variety of methods. Films were deposited by reactive magnetron sputtering, hot-wire chemical vapor deposition, and plasma enhanced chemical vapor deposition with and without H 2 dilution of the SiH 4 precursor gas. All of the films show the signature of the paracrystalline structure typical of amorphous Si. There are small variations in the degree of medium-range order with deposition method and H content. The PECVD film grown with high H 2 dilution contains Si crystals ∼5 nm in diameter at a density of ∼10 9 cm -2. The amorphous matrix surrounding these crystals shows no difference in medium-range order from the standard PECVD film. This supports explanations of the resistance of the H-dilution material to light-induced degradation that depend only on the presence of crystalline grains without modifications of the amorphous matrix.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsR.W. Collins, H.M. Branz, M. Stutzmann, S. Guha, H. Okamoto
Volume609
StatePublished - 2000
Externally publishedYes
EventAmorphous and Heterogeneus Silicon Thin Films-2000 - San Francisco, CA, United States
Duration: Apr 24 2000Apr 28 2000

Other

OtherAmorphous and Heterogeneus Silicon Thin Films-2000
CountryUnited States
CitySan Francisco, CA
Period4/24/004/28/00

Fingerprint

Amorphous silicon
Microscopic examination
Plasma enhanced chemical vapor deposition
Dilution
Crystals
Reactive sputtering
Magnetron sputtering
Electron microscopy
Chemical vapor deposition
Gases
Wire
Crystalline materials
Degradation
Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Voyles, P. M., Treacy, M., Jin, H. C., Abelson, J. R., Gibson, J. M., Yang, J., ... Crandall, R. S. (2000). Comparative fluctuation microscopy study of medium-range order in hydrogenated amorphous silicon deposited by various methods. In R. W. Collins, H. M. Branz, M. Stutzmann, S. Guha, & H. Okamoto (Eds.), Materials Research Society Symposium - Proceedings (Vol. 609)

Comparative fluctuation microscopy study of medium-range order in hydrogenated amorphous silicon deposited by various methods. / Voyles, P. M.; Treacy, Michael; Jin, H. C.; Abelson, J. R.; Gibson, J. M.; Yang, J.; Guha, S.; Crandall, R. S.

Materials Research Society Symposium - Proceedings. ed. / R.W. Collins; H.M. Branz; M. Stutzmann; S. Guha; H. Okamoto. Vol. 609 2000.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Voyles, PM, Treacy, M, Jin, HC, Abelson, JR, Gibson, JM, Yang, J, Guha, S & Crandall, RS 2000, Comparative fluctuation microscopy study of medium-range order in hydrogenated amorphous silicon deposited by various methods. in RW Collins, HM Branz, M Stutzmann, S Guha & H Okamoto (eds), Materials Research Society Symposium - Proceedings. vol. 609, Amorphous and Heterogeneus Silicon Thin Films-2000, San Francisco, CA, United States, 4/24/00.
Voyles PM, Treacy M, Jin HC, Abelson JR, Gibson JM, Yang J et al. Comparative fluctuation microscopy study of medium-range order in hydrogenated amorphous silicon deposited by various methods. In Collins RW, Branz HM, Stutzmann M, Guha S, Okamoto H, editors, Materials Research Society Symposium - Proceedings. Vol. 609. 2000
Voyles, P. M. ; Treacy, Michael ; Jin, H. C. ; Abelson, J. R. ; Gibson, J. M. ; Yang, J. ; Guha, S. ; Crandall, R. S. / Comparative fluctuation microscopy study of medium-range order in hydrogenated amorphous silicon deposited by various methods. Materials Research Society Symposium - Proceedings. editor / R.W. Collins ; H.M. Branz ; M. Stutzmann ; S. Guha ; H. Okamoto. Vol. 609 2000.
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