Abstract
We have characterized by fluctuation electron microscopy the medium-range order of hydrogenated amorphous silicon thin films deposited by a variety of methods. Films were deposited by reactive magnetron sputtering, hot-wire chemical vapor deposition, and plasma enhanced chemical vapor deposition with and without H 2 dilution of the SiH 4 precursor gas. All of the films show the signature of the paracrystalline structure typical of amorphous Si. There are small variations in the degree of medium-range order with deposition method and H content. The PECVD film grown with high H 2 dilution contains Si crystals ∼5 nm in diameter at a density of ∼10 9 cm -2. The amorphous matrix surrounding these crystals shows no difference in medium-range order from the standard PECVD film. This supports explanations of the resistance of the H-dilution material to light-induced degradation that depend only on the presence of crystalline grains without modifications of the amorphous matrix.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Editors | R.W. Collins, H.M. Branz, M. Stutzmann, S. Guha, H. Okamoto |
Volume | 609 |
State | Published - 2000 |
Externally published | Yes |
Event | Amorphous and Heterogeneus Silicon Thin Films-2000 - San Francisco, CA, United States Duration: Apr 24 2000 → Apr 28 2000 |
Other
Other | Amorphous and Heterogeneus Silicon Thin Films-2000 |
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Country/Territory | United States |
City | San Francisco, CA |
Period | 4/24/00 → 4/28/00 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials