Comparative analysis of threshold voltage variations in presence of random channel dopants and a single random interface trap for 45 nm n-MOSFET as predicted by ensemble Monte Carlo simulation and existing analytical model expressions

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Proper analytical physically based model to predict fluctuations in the threshold voltage due to a single interface trap at a random location along the channel in a typical sub-50 nm MOSFET is of utmost significance. This research summary compares the efficacy of the existing analytical model based on dopant number fluctuation estimation in the channel of a MOSFET when compared to 3D Ensemble Monte Carlo (EMC) device simulation model in the presence of a random interface trap in the channel between the source and drain regions. The gate length of the nMOSFET device being investigated is 45 nm and the effective channel length is 32 nm. We demonstrate, for the first time, the shortcomings of the analytical models in capturing the short range Coulomb force interactions when the interface trap is located near the source end of the channel.

Original languageEnglish (US)
Title of host publicationTechnical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Pages145-148
Number of pages4
StatePublished - Nov 23 2011
EventNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 - Boston, MA, United States
Duration: Jun 13 2011Jun 16 2011

Publication series

NameTechnical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Volume2

Other

OtherNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
CountryUnited States
CityBoston, MA
Period6/13/116/16/11

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Keywords

  • 3D Monte Carlo device simulations
  • Random dopant fluctuations
  • Random interface trap
  • Short range coulomb interactions
  • Threshold voltage variations

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Ashraf, N., & Vasileska, D. (2011). Comparative analysis of threshold voltage variations in presence of random channel dopants and a single random interface trap for 45 nm n-MOSFET as predicted by ensemble Monte Carlo simulation and existing analytical model expressions. In Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 (pp. 145-148). (Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011; Vol. 2).