Comparative analysis of threshold voltage variations in presence of random channel dopants and a single random interface trap for 45 nm n-MOSFET as predicted by ensemble Monte Carlo simulation and existing analytical model expressions

Proper analytical physically based model to predict fluctuations in the threshold voltage due to a single interface trap at a random location along the channel in a typical sub-50 nm MOSFET is of utmost significance. This research summary compares the efficacy of the existing analytical model based on dopant number fluctuation estimation in the channel of a MOSFET when compared to 3D Ensemble Monte Carlo (EMC) device simulation model in the presence of a random interface trap in the channel between the source and drain regions. The gate length of the nMOSFET device being investigated is 45 nm and the effective channel length is 32 nm. We demonstrate, for the first time, the shortcomings of the analytical models in capturing the short range Coulomb force interactions when the interface trap is located near the source end of the channel.