Comparative analysis of mobility and dopant number fluctuations based models for the threshold voltage fluctuations estimation in 45 nm channel length MOSFET devices in the presence of random traps and random dopants

Nabil Ashraf, Dragica Vasileska, Gilson Wirth, Srinivasan Purushothaman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Proper analytical physically based model to predict the fluctuations in threshold voltage induced by a single interface trap at a random location along the channel in a typical sub-50 nm MOSFET is of utmost significance. To date, the existing analytical models fail to account for the higher fluctuation in threshold voltage near the source of a sub-50 nm MOSFET in presence of a random interface trap. The authors in this paper report for the first time a new analytical model incorporating interface mobility fluctuations of carrier electrons in addition to dopant number fluctuations, which precisely accounts for the higher peak of threshold voltage fluctuations at the source injection barrier of a MOSFET which is also confirmed by Ensemble Monte Carlo ( EMC ) device simulation.

Original languageEnglish (US)
Title of host publication2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Pages492-495
Number of pages4
DOIs
StatePublished - Dec 1 2011
Event2011 11th IEEE International Conference on Nanotechnology, NANO 2011 - Portland, OR, United States
Duration: Aug 15 2011Aug 19 2011

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Other

Other2011 11th IEEE International Conference on Nanotechnology, NANO 2011
CountryUnited States
CityPortland, OR
Period8/15/118/19/11

Keywords

  • Random dopant fluctuations
  • mobility fluctuations
  • random interface trap
  • short range Coulomb interactions
  • threshold voltage variations

ASJC Scopus subject areas

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Comparative analysis of mobility and dopant number fluctuations based models for the threshold voltage fluctuations estimation in 45 nm channel length MOSFET devices in the presence of random traps and random dopants'. Together they form a unique fingerprint.

Cite this