TY - GEN
T1 - Comparative analysis of mobility and dopant number fluctuations based models for the threshold voltage fluctuations estimation in 45 nm channel length MOSFET devices in the presence of random traps and random dopants
AU - Ashraf, Nabil
AU - Vasileska, Dragica
AU - Wirth, Gilson
AU - Purushothaman, Srinivasan
PY - 2011
Y1 - 2011
N2 - Proper analytical physically based model to predict the fluctuations in threshold voltage induced by a single interface trap at a random location along the channel in a typical sub-50 nm MOSFET is of utmost significance. To date, the existing analytical models fail to account for the higher fluctuation in threshold voltage near the source of a sub-50 nm MOSFET in presence of a random interface trap. The authors in this paper report for the first time a new analytical model incorporating interface mobility fluctuations of carrier electrons in addition to dopant number fluctuations, which precisely accounts for the higher peak of threshold voltage fluctuations at the source injection barrier of a MOSFET which is also confirmed by Ensemble Monte Carlo ( EMC ) device simulation.
AB - Proper analytical physically based model to predict the fluctuations in threshold voltage induced by a single interface trap at a random location along the channel in a typical sub-50 nm MOSFET is of utmost significance. To date, the existing analytical models fail to account for the higher fluctuation in threshold voltage near the source of a sub-50 nm MOSFET in presence of a random interface trap. The authors in this paper report for the first time a new analytical model incorporating interface mobility fluctuations of carrier electrons in addition to dopant number fluctuations, which precisely accounts for the higher peak of threshold voltage fluctuations at the source injection barrier of a MOSFET which is also confirmed by Ensemble Monte Carlo ( EMC ) device simulation.
KW - Random dopant fluctuations
KW - mobility fluctuations
KW - random interface trap
KW - short range Coulomb interactions
KW - threshold voltage variations
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U2 - 10.1109/NANO.2011.6144308
DO - 10.1109/NANO.2011.6144308
M3 - Conference contribution
AN - SCOPUS:84858994061
SN - 9781457715143
T3 - Proceedings of the IEEE Conference on Nanotechnology
SP - 492
EP - 495
BT - 2011 11th IEEE International Conference on Nanotechnology, NANO 2011
T2 - 2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Y2 - 15 August 2011 through 19 August 2011
ER -