Comparative analysis of mobility and dopant number fluctuation models for the threshold voltage fluctuation estimation in 45 nm channel length MOSFET device

Nabil Ashraf, Dragica Vasileska, Gilson Wirth, Purushothaman Srinivasan

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Fingerprint

Dive into the research topics of 'Comparative analysis of mobility and dopant number fluctuation models for the threshold voltage fluctuation estimation in 45 nm channel length MOSFET device'. Together they form a unique fingerprint.

Engineering & Materials Science