Abstract

This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs}) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices. The modeling approach is suitable for simulating TID and aging effects in advanced MOS devices and ICs, and is compatible with modern MOSFET compact modeling techniques. A circuit-level demonstration is given for TID and aging effects in SRAM cells.

Original languageEnglish (US)
Article number7128413
Pages (from-to)1501-1515
Number of pages15
JournalIEEE Transactions on Nuclear Science
Volume62
Issue number4
DOIs
StatePublished - Aug 1 2015

Fingerprint

MOS devices
metal oxide semiconductors
Aging of materials
semiconductor devices
dosage
Integrated circuits
Metals
integrated circuits
Static random access storage
Ionizing radiation
Surface potential
Electrostatics
radiation dosage
Demonstrations
Physics
ionizing radiation
Silicon
Defects
Oxides
field effect transistors

Keywords

  • Aging effects
  • compact modeling
  • ionizing radiation
  • MOSFET
  • semiconductor devices
  • SOI

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Compact modeling of total ionizing dose and aging effects in MOS technologies. / Sanchez Esqueda, I.; Barnaby, Hugh; King, M. P.

In: IEEE Transactions on Nuclear Science, Vol. 62, No. 4, 7128413, 01.08.2015, p. 1501-1515.

Research output: Contribution to journalArticle

@article{79d6620fc16b429e9874f4b8aa52f962,
title = "Compact modeling of total ionizing dose and aging effects in MOS technologies",
abstract = "This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs}) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices. The modeling approach is suitable for simulating TID and aging effects in advanced MOS devices and ICs, and is compatible with modern MOSFET compact modeling techniques. A circuit-level demonstration is given for TID and aging effects in SRAM cells.",
keywords = "Aging effects, compact modeling, ionizing radiation, MOSFET, semiconductor devices, SOI",
author = "{Sanchez Esqueda}, I. and Hugh Barnaby and King, {M. P.}",
year = "2015",
month = "8",
day = "1",
doi = "10.1109/TNS.2015.2414426",
language = "English (US)",
volume = "62",
pages = "1501--1515",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",

}

TY - JOUR

T1 - Compact modeling of total ionizing dose and aging effects in MOS technologies

AU - Sanchez Esqueda, I.

AU - Barnaby, Hugh

AU - King, M. P.

PY - 2015/8/1

Y1 - 2015/8/1

N2 - This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs}) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices. The modeling approach is suitable for simulating TID and aging effects in advanced MOS devices and ICs, and is compatible with modern MOSFET compact modeling techniques. A circuit-level demonstration is given for TID and aging effects in SRAM cells.

AB - This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs}) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices. The modeling approach is suitable for simulating TID and aging effects in advanced MOS devices and ICs, and is compatible with modern MOSFET compact modeling techniques. A circuit-level demonstration is given for TID and aging effects in SRAM cells.

KW - Aging effects

KW - compact modeling

KW - ionizing radiation

KW - MOSFET

KW - semiconductor devices

KW - SOI

UR - http://www.scopus.com/inward/record.url?scp=85027926121&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85027926121&partnerID=8YFLogxK

U2 - 10.1109/TNS.2015.2414426

DO - 10.1109/TNS.2015.2414426

M3 - Article

AN - SCOPUS:85027926121

VL - 62

SP - 1501

EP - 1515

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 4

M1 - 7128413

ER -