132 Scopus citations

Abstract

In this paper, we present a compact model for metal-oxide-based resistive random access memory (RRAM) devices with bipolar switching characteristics. The switching mechanism relies on the dynamics of conductive filament growth/dissolution in the oxide layer. Besides the dc and pulsed I-V characteristics, the model also captures the RRAM retention property and the temperature dynamics. The model parameters and the device variations are calibrated from the experimental data of IMEC HfOx-based RRAM devices. The model has been implemented in Verilog-A, which can be easily adapted into the SPICE simulator for the circuit-level analysis. As case studies, we demonstrate the model's applications on the programming scheme design of the 1-transistor-1-resistor array, as well as the design space exploration of the 1-selector-1-resistor cross-point array toward megabit-level.

Original languageEnglish (US)
Article number7312469
Pages (from-to)4022-4028
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume62
Issue number12
DOIs
StatePublished - Dec 2015

Keywords

  • 1-selector-1-resistor (1S1R)
  • 1-transistor-1-resistor (1T1R)
  • compact model
  • conductive filament (CF)
  • cross-point array
  • resistive random access memory (RRAM)
  • resistive switching
  • selector
  • variations.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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