Compact modeling of parameter variations of nanoscale CMOS due to random dopant fluctuation

Yun Ye, Ying Zhu, Hongyu He, Jinhe Mei, Yu Cao, Jin He

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In nanoscale CMOS design, the compact modeling of random dopant fluctuation (RDF), which is the major variability source, is crucial important to bridge the variation aware design to the underlying physics. In this paper the variability modeling taking both threshold voltage (Vth) and mobility (μ) into account is presented. The difference between the proposed method and the traditional approach using only Vth variation for RDF is compared and discussed.

Original languageEnglish (US)
Title of host publicationTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Pages552-555
Number of pages4
StatePublished - Aug 9 2013
EventNanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 - Washington, DC, United States
Duration: May 12 2013May 16 2013

Publication series

NameTechnical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Volume2

Other

OtherNanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
CountryUnited States
CityWashington, DC
Period5/12/135/16/13

Keywords

  • Nanoscale CMOS circuit
  • Random dopant fluctuation (RDF)
  • Statistical compact modeling

ASJC Scopus subject areas

  • Biotechnology

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  • Cite this

    Ye, Y., Zhu, Y., He, H., Mei, J., Cao, Y., & He, J. (2013). Compact modeling of parameter variations of nanoscale CMOS due to random dopant fluctuation. In Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 (pp. 552-555). (Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013; Vol. 2).