Compact modeling of amorphous-silicon thin-film transistors with BSIM3

Rahul Shringarpure; Sameer Venugopal; Korhan Kaftanoglu; Lawrence T. Clark; David Allee; Edward Bawolek

doi:10.1889/JSID16.11.1147

Compact modeling of amorphous-silicon thin-film transistors with BSIM3

Rahul Shringarpure, Sameer Venugopal, Korhan Kaftanoglu, Lawrence T. Clark, David Allee, Edward Bawolek

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A novel approach of modeling a-Si:H TFTs with the industry-standard BSIM3 compact model is presented. The described approach defines the a-Si:H TFT drain current and terminal charges as explicit functions of terminal voltages using a minimum set of BSIM3 parameters. The set of BSIM3 parameters is chosen based on the electrical and physical characteristics of the a-Si:H TFT and their values extracted from measured data. By using the selected BSIM3 model parameters, the a-Si:H TFT is simulated inside SPICE to fit the simulated /-Vand C-V curves with the measured results. Finally, the extracted BSIM3 model is validated by simulating the kickback voltage effect in an AMLCD pixel array.

Original language	English (US)
Pages (from-to)	1147-1155
Number of pages	9
Journal	Journal of the Society for Information Display
Volume	16
Issue number	11
DOIs	https://doi.org/10.1889/JSID16.11.1147
State	Published - Nov 2008

Keywords

AMLCD
Amorphous-silicon thin-film transistors
BSIM3
Circuit simulation
Device modeling
Kickback voltage

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1889/JSID16.11.1147

Cite this

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abstract = "A novel approach of modeling a-Si:H TFTs with the industry-standard BSIM3 compact model is presented. The described approach defines the a-Si:H TFT drain current and terminal charges as explicit functions of terminal voltages using a minimum set of BSIM3 parameters. The set of BSIM3 parameters is chosen based on the electrical and physical characteristics of the a-Si:H TFT and their values extracted from measured data. By using the selected BSIM3 model parameters, the a-Si:H TFT is simulated inside SPICE to fit the simulated /-Vand C-V curves with the measured results. Finally, the extracted BSIM3 model is validated by simulating the kickback voltage effect in an AMLCD pixel array.",

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author = "Rahul Shringarpure and Sameer Venugopal and Korhan Kaftanoglu and Clark, {Lawrence T.} and David Allee and Edward Bawolek",

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AU - Venugopal, Sameer

AU - Kaftanoglu, Korhan

AU - Clark, Lawrence T.

AU - Allee, David

AU - Bawolek, Edward

PY - 2008/11

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N2 - A novel approach of modeling a-Si:H TFTs with the industry-standard BSIM3 compact model is presented. The described approach defines the a-Si:H TFT drain current and terminal charges as explicit functions of terminal voltages using a minimum set of BSIM3 parameters. The set of BSIM3 parameters is chosen based on the electrical and physical characteristics of the a-Si:H TFT and their values extracted from measured data. By using the selected BSIM3 model parameters, the a-Si:H TFT is simulated inside SPICE to fit the simulated /-Vand C-V curves with the measured results. Finally, the extracted BSIM3 model is validated by simulating the kickback voltage effect in an AMLCD pixel array.

AB - A novel approach of modeling a-Si:H TFTs with the industry-standard BSIM3 compact model is presented. The described approach defines the a-Si:H TFT drain current and terminal charges as explicit functions of terminal voltages using a minimum set of BSIM3 parameters. The set of BSIM3 parameters is chosen based on the electrical and physical characteristics of the a-Si:H TFT and their values extracted from measured data. By using the selected BSIM3 model parameters, the a-Si:H TFT is simulated inside SPICE to fit the simulated /-Vand C-V curves with the measured results. Finally, the extracted BSIM3 model is validated by simulating the kickback voltage effect in an AMLCD pixel array.

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Compact modeling of amorphous-silicon thin-film transistors with BSIM3

Abstract

Keywords

ASJC Scopus subject areas

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