Compact modeling of a PD SOI MESFET for wide temperature designs

Engineering & Materials Science

• MISFET devices 100%
• Silicon 41%
• MESFET devices 21%
• Temperature 20%
• Oxides 7%
• Electric potential 6%
• Scattering parameters 4%
• Electric breakdown 4%
• Networks (circuits) 4%
• Computer hardware description languages 4%
• Capacitance 3%
• Transistors 3%
• Electronic equipment 3%
• Substrates 3%

Physics & Astronomy

• MIS (semiconductors) 58%
• field effect transistors 41%
• silicon 28%
• temperature 15%
• metals 6%
• insulators 6%
• oxides 5%
• electric potential 4%
• electrical faults 4%
• CMOS 3%
• high voltages 3%
• capacitance 3%
• transistors 3%
• direct current 3%
• electronics 2%
• performance 1%

Chemical Compounds

• Field Effect 51%
• Semiconductor 39%
• Metal 23%
• Voltage 22%
• Breakdown Voltage 15%
• Environment 5%
• Oxide 5%
• Application 3%