Compact model and circuit simulations for asymmetric, independent gate FinFETs

Gajanan Dessai; Weimin Wu; Bertan Bakkaloglu; Colin C. McAndrew; Gennady Gildenblat

doi:10.1007/s10825-010-0312-0

Compact model and circuit simulations for asymmetric, independent gate FinFETs

Gajanan Dessai, Weimin Wu, Bertan Bakkaloglu, Colin C. McAndrew, Gennady Gildenblat

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We present a rigorous surface-potential-based compact model of independent-gate asymmetric FinFETs enabled by solving several long-standing theoretical problems. The model is verified with TCAD simulations and is implemented in a standard circuit simulator. Simulation examples for both digital and analog circuits verify good model convergence and demonstrate the capabilities of new circuit topologies that can be implemented using independent-gate asymmetric FinFETs.

Original language	English (US)
Pages (from-to)	103-107
Number of pages	5
Journal	Journal of Computational Electronics
Volume	9
Issue number	3-4
DOIs	https://doi.org/10.1007/s10825-010-0312-0
State	Published - Dec 2010

Keywords

Compact model
Independent-gate FinFET
Surface potential
Symmetric linearization

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Modeling and Simulation
Electrical and Electronic Engineering

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10.1007/s10825-010-0312-0

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abstract = "We present a rigorous surface-potential-based compact model of independent-gate asymmetric FinFETs enabled by solving several long-standing theoretical problems. The model is verified with TCAD simulations and is implemented in a standard circuit simulator. Simulation examples for both digital and analog circuits verify good model convergence and demonstrate the capabilities of new circuit topologies that can be implemented using independent-gate asymmetric FinFETs.",

keywords = "Compact model, Independent-gate FinFET, Surface potential, Symmetric linearization",

author = "Gajanan Dessai and Weimin Wu and Bertan Bakkaloglu and McAndrew, {Colin C.} and Gennady Gildenblat",

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AU - Dessai, Gajanan

AU - Wu, Weimin

AU - Bakkaloglu, Bertan

AU - McAndrew, Colin C.

AU - Gildenblat, Gennady

PY - 2010/12

Y1 - 2010/12

N2 - We present a rigorous surface-potential-based compact model of independent-gate asymmetric FinFETs enabled by solving several long-standing theoretical problems. The model is verified with TCAD simulations and is implemented in a standard circuit simulator. Simulation examples for both digital and analog circuits verify good model convergence and demonstrate the capabilities of new circuit topologies that can be implemented using independent-gate asymmetric FinFETs.

AB - We present a rigorous surface-potential-based compact model of independent-gate asymmetric FinFETs enabled by solving several long-standing theoretical problems. The model is verified with TCAD simulations and is implemented in a standard circuit simulator. Simulation examples for both digital and analog circuits verify good model convergence and demonstrate the capabilities of new circuit topologies that can be implemented using independent-gate asymmetric FinFETs.

KW - Compact model

KW - Independent-gate FinFET

KW - Surface potential

KW - Symmetric linearization

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ER -

Compact model and circuit simulations for asymmetric, independent gate FinFETs

Abstract

Keywords

ASJC Scopus subject areas

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