Compact model and circuit simulations for asymmetric, independent gate FinFETs

Gajanan Dessai, Weimin Wu, Bertan Bakkaloglu, Colin C. McAndrew, Gennady Gildenblat

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We present a rigorous surface-potential-based compact model of independent-gate asymmetric FinFETs enabled by solving several long-standing theoretical problems. The model is verified with TCAD simulations and is implemented in a standard circuit simulator. Simulation examples for both digital and analog circuits verify good model convergence and demonstrate the capabilities of new circuit topologies that can be implemented using independent-gate asymmetric FinFETs.

Original languageEnglish (US)
Pages (from-to)103-107
Number of pages5
JournalJournal of Computational Electronics
Volume9
Issue number3-4
DOIs
StatePublished - Dec 2010

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Circuit Simulation
Circuit simulation
Surface Potential
analog circuits
Electric network topology
Analog Circuits
Digital Circuits
digital electronics
simulation
Digital circuits
Analog circuits
Surface potential
simulators
Simulation
Simulator
topology
Simulators
Model
Verify
Topology

Keywords

  • Compact model
  • Independent-gate FinFET
  • Surface potential
  • Symmetric linearization

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials
  • Modeling and Simulation

Cite this

Compact model and circuit simulations for asymmetric, independent gate FinFETs. / Dessai, Gajanan; Wu, Weimin; Bakkaloglu, Bertan; McAndrew, Colin C.; Gildenblat, Gennady.

In: Journal of Computational Electronics, Vol. 9, No. 3-4, 12.2010, p. 103-107.

Research output: Contribution to journalArticle

Dessai, Gajanan ; Wu, Weimin ; Bakkaloglu, Bertan ; McAndrew, Colin C. ; Gildenblat, Gennady. / Compact model and circuit simulations for asymmetric, independent gate FinFETs. In: Journal of Computational Electronics. 2010 ; Vol. 9, No. 3-4. pp. 103-107.
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