Compact model and circuit simulations for asymmetric, independent gate FinFETs

Gajanan Dessai, Weimin Wu, Bertan Bakkaloglu, Colin C. McAndrew, Gennady Gildenblat

Research output: Contribution to journalArticlepeer-review

Abstract

We present a rigorous surface-potential-based compact model of independent-gate asymmetric FinFETs enabled by solving several long-standing theoretical problems. The model is verified with TCAD simulations and is implemented in a standard circuit simulator. Simulation examples for both digital and analog circuits verify good model convergence and demonstrate the capabilities of new circuit topologies that can be implemented using independent-gate asymmetric FinFETs.

Original languageEnglish (US)
Pages (from-to)103-107
Number of pages5
JournalJournal of Computational Electronics
Volume8
Issue number3-4
StatePublished - Dec 1 2009

Keywords

  • Compact model
  • Independent-gate FinFET
  • Surface potential
  • Symmetric linearization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering

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