Communication—light-induced plating of aluminum on silicon in a lewis acidic chloroaluminate ionic liquid

Laidong Wang, Wen Hsi Huang, Woo Jung Shin, Meng Tao, Bowen Deng, Dihua Wang

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Conventional electroplating of aluminum on silicon often requires a seed layer to overcome the high resistivity of the substrate. In this paper, light-induced plating of aluminum directly on a silicon substrate in an ionic liquid is reported. Without any seed layer, the deposited aluminum has good adhesion to the silicon surface. The resistivity of the aluminum deposits is as low as 4 × 10–6 -cm, which is only about 1.5 times that of bulk aluminum. The suitable wavelength for the light source is 600 nm to 1,000 nm. The effect of plating temperature on morphology of the aluminum deposits is analyzed.

Original languageEnglish (US)
Pages (from-to)D381-D383
JournalJournal of the Electrochemical Society
Volume165
Issue number9
DOIs
StatePublished - Jan 1 2018

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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