COMBINED EFFECT OF ACCELERATION VOLTAGE AND INCIDENT BEAM ORIENTATION ON THE CHARACTERISTIC X-RAY PRODUCTION IN THIN CRYSTALS.

Kannan M. Krishnan, Peter Rez, Gareth Thomas, Yasuhiro Yokota, H. Hashimoto

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A systematic experimental study has been carried out to determine the combined effect of acceleration voltage and incident beam orientation on the characteristic X-ray production in thin crystals. For MgAl//2O//4 it has been shown that the orientation dependence undergoes a reversal in character above a particular voltage, which is referred to now as the 'inversion' voltage. This inversion voltage has been experimentally determined to be approximately 270kv for MgAl//2O//4 compounds with a spinel structure and is in agreement with theoretical predictions based on a highly localized scattering model for characteristic X-ray production in thin crystals. This 'inversion voltage' behaviour has been shown to be different from the conventional critical voltage effect. Moreover, in order to obtain an analysis independent of the incident beam orientation or the acceleration voltage, it is essential to systematically tilt the crystal to an orientation at which no lower-order Bragg reflections are excited.

Original languageEnglish (US)
Pages (from-to)339-348
Number of pages10
JournalPhilosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties
Volume53
Issue number4 pt 2
StatePublished - Apr 1986

Fingerprint

X ray production
Crystals
Electric potential
Crystal orientation
Scattering

ASJC Scopus subject areas

  • Engineering(all)

Cite this

COMBINED EFFECT OF ACCELERATION VOLTAGE AND INCIDENT BEAM ORIENTATION ON THE CHARACTERISTIC X-RAY PRODUCTION IN THIN CRYSTALS. / Krishnan, Kannan M.; Rez, Peter; Thomas, Gareth; Yokota, Yasuhiro; Hashimoto, H.

In: Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties, Vol. 53, No. 4 pt 2, 04.1986, p. 339-348.

Research output: Contribution to journalArticle

@article{a638f2b1ca324dd58f6e7e4981e94d90,
title = "COMBINED EFFECT OF ACCELERATION VOLTAGE AND INCIDENT BEAM ORIENTATION ON THE CHARACTERISTIC X-RAY PRODUCTION IN THIN CRYSTALS.",
abstract = "A systematic experimental study has been carried out to determine the combined effect of acceleration voltage and incident beam orientation on the characteristic X-ray production in thin crystals. For MgAl//2O//4 it has been shown that the orientation dependence undergoes a reversal in character above a particular voltage, which is referred to now as the 'inversion' voltage. This inversion voltage has been experimentally determined to be approximately 270kv for MgAl//2O//4 compounds with a spinel structure and is in agreement with theoretical predictions based on a highly localized scattering model for characteristic X-ray production in thin crystals. This 'inversion voltage' behaviour has been shown to be different from the conventional critical voltage effect. Moreover, in order to obtain an analysis independent of the incident beam orientation or the acceleration voltage, it is essential to systematically tilt the crystal to an orientation at which no lower-order Bragg reflections are excited.",
author = "Krishnan, {Kannan M.} and Peter Rez and Gareth Thomas and Yasuhiro Yokota and H. Hashimoto",
year = "1986",
month = "4",
language = "English (US)",
volume = "53",
pages = "339--348",
journal = "Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties",
issn = "0141-8637",
publisher = "Taylor and Francis Ltd.",
number = "4 pt 2",

}

TY - JOUR

T1 - COMBINED EFFECT OF ACCELERATION VOLTAGE AND INCIDENT BEAM ORIENTATION ON THE CHARACTERISTIC X-RAY PRODUCTION IN THIN CRYSTALS.

AU - Krishnan, Kannan M.

AU - Rez, Peter

AU - Thomas, Gareth

AU - Yokota, Yasuhiro

AU - Hashimoto, H.

PY - 1986/4

Y1 - 1986/4

N2 - A systematic experimental study has been carried out to determine the combined effect of acceleration voltage and incident beam orientation on the characteristic X-ray production in thin crystals. For MgAl//2O//4 it has been shown that the orientation dependence undergoes a reversal in character above a particular voltage, which is referred to now as the 'inversion' voltage. This inversion voltage has been experimentally determined to be approximately 270kv for MgAl//2O//4 compounds with a spinel structure and is in agreement with theoretical predictions based on a highly localized scattering model for characteristic X-ray production in thin crystals. This 'inversion voltage' behaviour has been shown to be different from the conventional critical voltage effect. Moreover, in order to obtain an analysis independent of the incident beam orientation or the acceleration voltage, it is essential to systematically tilt the crystal to an orientation at which no lower-order Bragg reflections are excited.

AB - A systematic experimental study has been carried out to determine the combined effect of acceleration voltage and incident beam orientation on the characteristic X-ray production in thin crystals. For MgAl//2O//4 it has been shown that the orientation dependence undergoes a reversal in character above a particular voltage, which is referred to now as the 'inversion' voltage. This inversion voltage has been experimentally determined to be approximately 270kv for MgAl//2O//4 compounds with a spinel structure and is in agreement with theoretical predictions based on a highly localized scattering model for characteristic X-ray production in thin crystals. This 'inversion voltage' behaviour has been shown to be different from the conventional critical voltage effect. Moreover, in order to obtain an analysis independent of the incident beam orientation or the acceleration voltage, it is essential to systematically tilt the crystal to an orientation at which no lower-order Bragg reflections are excited.

UR - http://www.scopus.com/inward/record.url?scp=0022698292&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022698292&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0022698292

VL - 53

SP - 339

EP - 348

JO - Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties

JF - Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties

SN - 0141-8637

IS - 4 pt 2

ER -