Collision retardation and its role in femtosecond-laser excitation of semiconductor plasmas

D. K. Ferry, A. M. Kriman, H. Hida, S. Yamaguchi

Research output: Contribution to journalArticle

26 Scopus citations


The use of femtosecond laser pulses to excite electron-hole plasmas in semiconductors has become a major method of studying fast processes. The transition times from the central valley in GaAs to the satellite X and L valleys are comparable to the reciprocal of the frequency of the phonon involved, bringing into question the use of standard perturbation-theory approaches. We investigate the role of retardation arising from the collision duration required for such a transition to occur, through the use of a path-integral form of the quantum kinetic equation. A secondary self-scattering process and a probability of completed collisions are used to cast this equation in a semiclassical form.

Original languageEnglish (US)
Pages (from-to)633-635
Number of pages3
JournalPhysical Review Letters
Issue number5
StatePublished - Jan 1 1991


ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this