Collective excitations in InAs quantum well intersubband transitions

J. Li, C. Z. Ning

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

Intersubband transitions in semiconductor quantum well are studied using a density matrix theory that goes beyond the Hartree-Fock approximation by including the full second order electron-electron scattering terms in the polarization equation for the first time. Even though the spectral features remain qualitatively similar to the results obtained with dephasing rate approximation, significant quantitative changes result from such a more detailed treatment of dephasing. More specifically, we show how the interplay of the two fundamental collective excitations, the Fermi-edge singularity and the intersubband plasmon, leads to significant changes in lineshape as the electron density varies.

Original languageEnglish (US)
Pages (from-to)628-631
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume22
Issue number1-3
DOIs
StatePublished - Apr 1 2004
Externally publishedYes
Event15th International Conference on ELectronic Propreties - Nara, Japan
Duration: Jul 14 2003Jul 18 2003

Keywords

  • Carrier scattering
  • Fermi edge singularity
  • Intersubband plasmon
  • Intersubband transitions
  • Many-body effects

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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