Collective excitations in InAs quantum well intersubband transitions

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Intersubband transitions in semiconductor quantum well are studied using a density matrix theory that goes beyond the Hartree-Fock approximation by including the full second order electron-electron scattering terms in the polarization equation for the first time. Even though the spectral features remain qualitatively similar to the results obtained with dephasing rate approximation, significant quantitative changes result from such a more detailed treatment of dephasing. More specifically, we show how the interplay of the two fundamental collective excitations, the Fermi-edge singularity and the intersubband plasmon, leads to significant changes in lineshape as the electron density varies.

Original languageEnglish (US)
Pages (from-to)628-631
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume22
Issue number1-3
DOIs
StatePublished - Apr 2004
Externally publishedYes

Fingerprint

Hartree approximation
Electron scattering
matrix theory
Semiconductor quantum wells
Carrier concentration
electron scattering
quantum wells
Polarization
Electrons
polarization
approximation
excitation
electrons
indium arsenide

Keywords

  • Carrier scattering
  • Fermi edge singularity
  • Intersubband plasmon
  • Intersubband transitions
  • Many-body effects

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Collective excitations in InAs quantum well intersubband transitions. / Li, J.; Ning, Cun-Zheng.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 22, No. 1-3, 04.2004, p. 628-631.

Research output: Contribution to journalArticle

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