Collection of photocarriers in Ga 1-xin xN yAs 1-y solar cells

Sarah Kurtz; J. F. Geisz; D. J. Friedman; A. J. Ptak; Richard King; D. C. Law; N. H. Karam

Collection of photocarriers in Ga _1-xin _xN _yAs _1-y solar cells

Sarah Kurtz, J. F. Geisz, D. J. Friedman, A. J. Ptak, Richard King, D. C. Law, N. H. Karam

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Collection of photocarriers in Ga _1-xIn _xN _yAs _1-y solar cells is limited by the poor quality of the Ga _1-xIn _xN _yAs _1-y. Some reports have shown collection of photocarriers outside of the depleted layer in annealed Ga _1-xIn _xN _yAs _1-y, but the key to achieving the higher collection has been unclear. In this paper, we attempt to quantify the diffusion and collection lengths that contribute to the photocurrent in Ga _1-xIn _xN _yAs _1-y solar cells. The data imply that the effective μτ product for the lightly doped Ga _1-xIn _xN _yAs _1-y material may vary when a field is applied. We conclude that the fields present in most of our best Ga _1-xIn _xN _yAs _1-y cells are large enough to aid collection of photocarriers.

Original language	English (US)
Title of host publication	Conference Record of the IEEE Photovoltaic Specialists Conference
Pages	707-710
Number of pages	4
State	Published - 2005
Externally published	Yes
Event	31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States Duration: Jan 3 2005 → Jan 7 2005

Other

Other	31st IEEE Photovoltaic Specialists Conference - 2005
Country/Territory	United States
City	Lake Buena Vista, FL
Period	1/3/05 → 1/7/05

ASJC Scopus subject areas

Condensed Matter Physics
Control and Systems Engineering

Cite this

@inproceedings{5981d0aa1b414d01a9e0795ae41360e4,

title = "Collection of photocarriers in Ga 1-xin xN yAs 1-y solar cells",

abstract = "Collection of photocarriers in Ga 1-xIn xN yAs 1-y solar cells is limited by the poor quality of the Ga 1-xIn xN yAs 1-y. Some reports have shown collection of photocarriers outside of the depleted layer in annealed Ga 1-xIn xN yAs 1-y, but the key to achieving the higher collection has been unclear. In this paper, we attempt to quantify the diffusion and collection lengths that contribute to the photocurrent in Ga 1-xIn xN yAs 1-y solar cells. The data imply that the effective μτ product for the lightly doped Ga 1-xIn xN yAs 1-y material may vary when a field is applied. We conclude that the fields present in most of our best Ga 1-xIn xN yAs 1-y cells are large enough to aid collection of photocarriers.",

author = "Sarah Kurtz and Geisz, {J. F.} and Friedman, {D. J.} and Ptak, {A. J.} and Richard King and Law, {D. C.} and Karam, {N. H.}",

year = "2005",

language = "English (US)",

pages = "707--710",

booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",

note = "31st IEEE Photovoltaic Specialists Conference - 2005 ; Conference date: 03-01-2005 Through 07-01-2005",

}

TY - GEN

T1 - Collection of photocarriers in Ga 1-xin xN yAs 1-y solar cells

AU - Kurtz, Sarah

AU - Geisz, J. F.

AU - Friedman, D. J.

AU - Ptak, A. J.

AU - King, Richard

AU - Law, D. C.

AU - Karam, N. H.

PY - 2005

Y1 - 2005

N2 - Collection of photocarriers in Ga 1-xIn xN yAs 1-y solar cells is limited by the poor quality of the Ga 1-xIn xN yAs 1-y. Some reports have shown collection of photocarriers outside of the depleted layer in annealed Ga 1-xIn xN yAs 1-y, but the key to achieving the higher collection has been unclear. In this paper, we attempt to quantify the diffusion and collection lengths that contribute to the photocurrent in Ga 1-xIn xN yAs 1-y solar cells. The data imply that the effective μτ product for the lightly doped Ga 1-xIn xN yAs 1-y material may vary when a field is applied. We conclude that the fields present in most of our best Ga 1-xIn xN yAs 1-y cells are large enough to aid collection of photocarriers.

AB - Collection of photocarriers in Ga 1-xIn xN yAs 1-y solar cells is limited by the poor quality of the Ga 1-xIn xN yAs 1-y. Some reports have shown collection of photocarriers outside of the depleted layer in annealed Ga 1-xIn xN yAs 1-y, but the key to achieving the higher collection has been unclear. In this paper, we attempt to quantify the diffusion and collection lengths that contribute to the photocurrent in Ga 1-xIn xN yAs 1-y solar cells. The data imply that the effective μτ product for the lightly doped Ga 1-xIn xN yAs 1-y material may vary when a field is applied. We conclude that the fields present in most of our best Ga 1-xIn xN yAs 1-y cells are large enough to aid collection of photocarriers.

UR - http://www.scopus.com/inward/record.url?scp=84861277886&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861277886&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84861277886

SP - 707

EP - 710

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - 31st IEEE Photovoltaic Specialists Conference - 2005

Y2 - 3 January 2005 through 7 January 2005

ER -

Collection of photocarriers in Ga _1-xin _xN _yAs _1-y solar cells

Abstract

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ASJC Scopus subject areas

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