Collection of photocarriers in Ga 1-xin xN yAs 1-y solar cells

Sarah Kurtz, J. F. Geisz, D. J. Friedman, A. J. Ptak, Richard King, D. C. Law, N. H. Karam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Collection of photocarriers in Ga 1-xIn xN yAs 1-y solar cells is limited by the poor quality of the Ga 1-xIn xN yAs 1-y. Some reports have shown collection of photocarriers outside of the depleted layer in annealed Ga 1-xIn xN yAs 1-y, but the key to achieving the higher collection has been unclear. In this paper, we attempt to quantify the diffusion and collection lengths that contribute to the photocurrent in Ga 1-xIn xN yAs 1-y solar cells. The data imply that the effective μτ product for the lightly doped Ga 1-xIn xN yAs 1-y material may vary when a field is applied. We conclude that the fields present in most of our best Ga 1-xIn xN yAs 1-y cells are large enough to aid collection of photocarriers.

Original languageEnglish (US)
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Pages707-710
Number of pages4
StatePublished - 2005
Externally publishedYes
Event31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, United States
Duration: Jan 3 2005Jan 7 2005

Other

Other31st IEEE Photovoltaic Specialists Conference - 2005
CountryUnited States
CityLake Buena Vista, FL
Period1/3/051/7/05

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Control and Systems Engineering

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    Kurtz, S., Geisz, J. F., Friedman, D. J., Ptak, A. J., King, R., Law, D. C., & Karam, N. H. (2005). Collection of photocarriers in Ga 1-xin xN yAs 1-y solar cells. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 707-710)