Cold cathode electron emission properties of nanocrystalline diamond thin films

A. R. Krauss; T. G. McCauley; D. M. Gruen; M. Ding; T. Corrigan; O. Auciello; R. P H Chang; M. Kordesch; Robert Nemanich; S. English; A. Breskin; E. Shefer; R. Chechyk; Y. Lifshitz; E. Grossman

Cold cathode electron emission properties of nanocrystalline diamond thin films

A. R. Krauss, T. G. McCauley, D. M. Gruen, M. Ding, T. Corrigan, O. Auciello, R. P H Chang, M. Kordesch, Robert Nemanich, S. English, A. Breskin, E. Shefer, R. Chechyk, Y. Lifshitz, E. Grossman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

Several methods for producing nanocrystalline diamond thin films with electron emission thresholds in the 2-5 volt/micron range are developed. The films are grown in Ar-C₆₀-H₂, Ar-CH₄, Ar-CH₄-H₂, Ar-CH₄-N₂, and N₂-CH₄ microwave plasmas, and with grain sizes ranging from approximately 5 to 100 nm and differs in morphology and electronic properties. Photoemission yields and STM images indicate that topographically enhanced electric fields may play a role in the low thresholds observed for some of these films; however, for other films, the required field enhancement is much too large to be explained in terms of local surface topography on a diamond surface, but the observed low emission thresholds appear to be associated with enhanced interband state density.

Original language	English (US)
Title of host publication	Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Place of Publication	Piscataway, NJ, United States
Publisher	IEEE
Pages	186-187
Number of pages	2
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA Duration: Jul 19 1998 → Jul 24 1998

Other

Other	Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC
City	Asheville, NC, USA
Period	7/19/98 → 7/24/98

ASJC Scopus subject areas

Surfaces and Interfaces

Cite this

Krauss, A. R., McCauley, T. G., Gruen, D. M., Ding, M., Corrigan, T., Auciello, O., Chang, R. P. H., Kordesch, M., Nemanich, R., English, S., Breskin, A., Shefer, E., Chechyk, R., Lifshitz, Y., & Grossman, E. (1998). Cold cathode electron emission properties of nanocrystalline diamond thin films. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC (pp. 186-187). IEEE.

Krauss, AR, McCauley, TG, Gruen, DM, Ding, M, Corrigan, T, Auciello, O, Chang, RPH, Kordesch, M, Nemanich, R, English, S, Breskin, A, Shefer, E, Chechyk, R, Lifshitz, Y & Grossman, E 1998, Cold cathode electron emission properties of nanocrystalline diamond thin films. in Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE, Piscataway, NJ, United States, pp. 186-187, Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, 7/19/98.

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title = "Cold cathode electron emission properties of nanocrystalline diamond thin films",

abstract = "Several methods for producing nanocrystalline diamond thin films with electron emission thresholds in the 2-5 volt/micron range are developed. The films are grown in Ar-C60-H2, Ar-CH4, Ar-CH4-H2, Ar-CH4-N2, and N2-CH4 microwave plasmas, and with grain sizes ranging from approximately 5 to 100 nm and differs in morphology and electronic properties. Photoemission yields and STM images indicate that topographically enhanced electric fields may play a role in the low thresholds observed for some of these films; however, for other films, the required field enhancement is much too large to be explained in terms of local surface topography on a diamond surface, but the observed low emission thresholds appear to be associated with enhanced interband state density.",

author = "Krauss, {A. R.} and McCauley, {T. G.} and Gruen, {D. M.} and M. Ding and T. Corrigan and O. Auciello and Chang, {R. P H} and M. Kordesch and Robert Nemanich and S. English and A. Breskin and E. Shefer and R. Chechyk and Y. Lifshitz and E. Grossman",

year = "1998",

language = "English (US)",

pages = "186--187",

booktitle = "Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC",

publisher = "IEEE",

note = "Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC ; Conference date: 19-07-1998 Through 24-07-1998",

}

TY - GEN

T1 - Cold cathode electron emission properties of nanocrystalline diamond thin films

AU - Krauss, A. R.

AU - McCauley, T. G.

AU - Gruen, D. M.

AU - Ding, M.

AU - Corrigan, T.

AU - Auciello, O.

AU - Chang, R. P H

AU - Kordesch, M.

AU - Nemanich, Robert

AU - English, S.

AU - Breskin, A.

AU - Shefer, E.

AU - Chechyk, R.

AU - Lifshitz, Y.

AU - Grossman, E.

PY - 1998

Y1 - 1998

N2 - Several methods for producing nanocrystalline diamond thin films with electron emission thresholds in the 2-5 volt/micron range are developed. The films are grown in Ar-C60-H2, Ar-CH4, Ar-CH4-H2, Ar-CH4-N2, and N2-CH4 microwave plasmas, and with grain sizes ranging from approximately 5 to 100 nm and differs in morphology and electronic properties. Photoemission yields and STM images indicate that topographically enhanced electric fields may play a role in the low thresholds observed for some of these films; however, for other films, the required field enhancement is much too large to be explained in terms of local surface topography on a diamond surface, but the observed low emission thresholds appear to be associated with enhanced interband state density.

AB - Several methods for producing nanocrystalline diamond thin films with electron emission thresholds in the 2-5 volt/micron range are developed. The films are grown in Ar-C60-H2, Ar-CH4, Ar-CH4-H2, Ar-CH4-N2, and N2-CH4 microwave plasmas, and with grain sizes ranging from approximately 5 to 100 nm and differs in morphology and electronic properties. Photoemission yields and STM images indicate that topographically enhanced electric fields may play a role in the low thresholds observed for some of these films; however, for other films, the required field enhancement is much too large to be explained in terms of local surface topography on a diamond surface, but the observed low emission thresholds appear to be associated with enhanced interband state density.

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M3 - Conference contribution

AN - SCOPUS:0032307897

SP - 186

EP - 187

BT - Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

PB - IEEE

CY - Piscataway, NJ, United States

T2 - Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC

Y2 - 19 July 1998 through 24 July 1998

ER -

Cold cathode electron emission properties of nanocrystalline diamond thin films

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