Coifman wavelets in 3D scattering from very rough surfaces

George Pan, Ke Wang, Barry K. Gilbert

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Scattering of electromagnetic waves from rough surfaces has been studied by analytical, experimental, and numerical means. In the numerical approaches, the Monte Carlo method has been used for decades employing the method of moments (MoM). Traditional MoM in conjunction with the Galerkin procedure requires that the computation time be on the order of n 2 for matrix filling and n 3 for matrix inversion if Gaussian elimination is employed. In this paper we employ the Coifman wavelets (Coiflets) which have compact supports, permit the multiresolution analysis (MRA) and form an orthonormal basis with zero moments, smoothness, and Dirac-δ-like property. The Coiflets reduce the matrix filling into O(n). In a benchmark case of a very rough surface with σ = 1λ, ℓ = 2λ, the matrix size has been reduced from 32,768 × 32,768 to 8192 × 8192. Numerical results agree well with the laboratory measurements. The backscattering enhancements are observed for both the like- and cross- polarizations.

Original languageEnglish (US)
Title of host publicationIEEE Antennas and Propagation Society, AP-S International Symposium (Digest)
Pages400-403
Number of pages4
Volume3
StatePublished - 2003
Event2003 IEEE International Antennas and Propagation Symposium and USNC/CNC/URSI North American Radio Science Meeting - Columbus, OH, United States
Duration: Jun 22 2003Jun 27 2003

Other

Other2003 IEEE International Antennas and Propagation Symposium and USNC/CNC/URSI North American Radio Science Meeting
CountryUnited States
CityColumbus, OH
Period6/22/036/27/03

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Pan, G., Wang, K., & Gilbert, B. K. (2003). Coifman wavelets in 3D scattering from very rough surfaces. In IEEE Antennas and Propagation Society, AP-S International Symposium (Digest) (Vol. 3, pp. 400-403)