Coexistence and competition of nematic and gapped states in bilayer graphene

E. V. Gorbar, V. P. Gusynin, V. A. Miransky, Igor Shovkovy

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

In bilayer graphene, the phase diagram in the plane of a strain-induced bare nematic term N 0 and a top-bottom gates voltage imbalance U 0 is obtained by solving the gap equation in the random-phase approximation. At nonzero N 0 and U 0, the phase diagram consists of two hybrid spin-valley symmetry-broken phases with both nontrivial nematic and mass-type order parameters. The corresponding phases are separated by a critical line of first- and second-order phase transitions at small and large values of N 0, respectively. The existence of a critical end point where the line of first-order phase transitions terminates is predicted. For N 0=0, a pure gapped state with a broken spin-valley symmetry is the ground state of the system. As N 0 increases, the nematic order parameter increases, and the gap weakens in the hybrid state. For U 0=0, a quantum second-order phase transition from the hybrid state into a pure gapless nematic state occurs when the strain reaches a critical value. A nonzero U 0 suppresses the critical value of the strain. The relevance of these results to recent experiments is briefly discussed.

Original languageEnglish (US)
Article number125439
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume86
Issue number12
DOIs
StatePublished - Sep 24 2012

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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