Cobic inclusions in 4H-SiC studied with ballistic electron-emission microscopy

Y. Ding, K. B. Park, J. P. Pelz, K. C. Palle, M. K. Mikhov, Brian Skromme, H. Meidia, S. Mahajan

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Using ballistic electron emission microscopy (BEEM), high-temperature- processing-induced 'double-stacking fault' cubic inclusions in 4H-Si-C were studied. BEEM is a three-terminal extension of scanning tunneling microscopy (STM) that can probe the local electronic transport properties of M/S interfaces with nanometer-scale spatial resolution and <10 meV energy resolution. It was found that measured spatial variations in the BEEM current were related to the inclusion orientation and local surface step structure. The observation of anomalously low schottky barrier height (SBH) suggested the existence of a triple-or quadruple-stacking fault inclusion.

Original languageEnglish (US)
Pages (from-to)1351-1355
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume22
Issue number4
DOIs
StatePublished - Jul 2004

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Electron emission
Ballistics
ballistics
electron emission
Microscopic examination
Stacking faults
inclusions
microscopy
crystal defects
Scanning tunneling microscopy
Transport properties
scanning tunneling microscopy
spatial resolution
transport properties
probes
Processing
electronics
Temperature
energy

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Cobic inclusions in 4H-SiC studied with ballistic electron-emission microscopy. / Ding, Y.; Park, K. B.; Pelz, J. P.; Palle, K. C.; Mikhov, M. K.; Skromme, Brian; Meidia, H.; Mahajan, S.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 22, No. 4, 07.2004, p. 1351-1355.

Research output: Contribution to journalArticle

Ding, Y. ; Park, K. B. ; Pelz, J. P. ; Palle, K. C. ; Mikhov, M. K. ; Skromme, Brian ; Meidia, H. ; Mahajan, S. / Cobic inclusions in 4H-SiC studied with ballistic electron-emission microscopy. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2004 ; Vol. 22, No. 4. pp. 1351-1355.
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