Cobalt silicide formation on 6H silicon carbide

A. O. Porto, B. I. Boyanov, D. E. Sayers, Robert Nemanich

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Cobalt films (1, 25 and 100 Å) have been directly deposited on top 6H-SiC(0001) wafers by molecular beam epitaxy and annealed at 500-8000C in UHV. The structure of the metal-semiconductor interface was investigated by XAFS. The results show that Co-Si bonds were preferentially formed in the 1 Å Co films. In the 25 and 100 Å Co films only Co-Co bonds were identified. The XRD pattern of the 100 Å Co film exhibits a Co (200) peak confirming the presence of unreacted metal even after annealing at 8000C.

Original languageEnglish (US)
Pages (from-to)188-189
Number of pages2
JournalJournal of Synchrotron Radiation
Volume6
Issue number3
StatePublished - May 1 1999
Externally publishedYes

Fingerprint

Silicon carbide
silicon carbides
Cobalt
cobalt
Metals
Molecular beam epitaxy
metals
molecular beam epitaxy
wafers
Annealing
Semiconductor materials
annealing

Keywords

  • Metal-semiconductor contacts
  • Molecular beam epitaxy
  • Silicon Carbide

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Instrumentation
  • Atomic and Molecular Physics, and Optics
  • Radiation

Cite this

Porto, A. O., Boyanov, B. I., Sayers, D. E., & Nemanich, R. (1999). Cobalt silicide formation on 6H silicon carbide. Journal of Synchrotron Radiation, 6(3), 188-189.

Cobalt silicide formation on 6H silicon carbide. / Porto, A. O.; Boyanov, B. I.; Sayers, D. E.; Nemanich, Robert.

In: Journal of Synchrotron Radiation, Vol. 6, No. 3, 01.05.1999, p. 188-189.

Research output: Contribution to journalArticle

Porto, AO, Boyanov, BI, Sayers, DE & Nemanich, R 1999, 'Cobalt silicide formation on 6H silicon carbide', Journal of Synchrotron Radiation, vol. 6, no. 3, pp. 188-189.
Porto AO, Boyanov BI, Sayers DE, Nemanich R. Cobalt silicide formation on 6H silicon carbide. Journal of Synchrotron Radiation. 1999 May 1;6(3):188-189.
Porto, A. O. ; Boyanov, B. I. ; Sayers, D. E. ; Nemanich, Robert. / Cobalt silicide formation on 6H silicon carbide. In: Journal of Synchrotron Radiation. 1999 ; Vol. 6, No. 3. pp. 188-189.
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