The formation of a silicide shunt on top of a poly-Si layer gives a structure which shows promise for small geometry gates and gate level interconnections. The use of this structure combines the advantages of the well characterized SiO//2/poly-Si interface with the desirable conducting properties of a transition metal silicide. Since the 'polycide' is based on a poly-Si layer deposited by CVD methods, step coverage is generally good. However, it is also important that these polycide conductors are made as thin as possible (while maintaining their high conductivity). This implies total thickness in the range 100-300 nm to aid step coverage of subsequent metal layers. This creates a requirement for a highly controlled method of polycide formation which allows an even silicide layer to form without disruption of the underlying poly-Si or SiO//2.
|Original language||English (US)|
|Title of host publication||IEE Colloquium (Digest)|
|State||Published - 1983|
ASJC Scopus subject areas
- Electrical and Electronic Engineering