Co-design of a SiGe BiCMOS X-band, asymmetric, low insertion loss, high power handling SPDT Switch and an Ultra Low Noise LNA for next-generation T/R modules

Inchan Ju, Robert L. Schmid, Moon Kyu Cho, Saeed Zeinolabedinzadeh, Mark Mitchell, John D. Cressler

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

This work proposes an asymmetric SPDT transmit/receive (T/R) switch co-optimized with a low-noise amplifier (LNA) tailored to X-band operation and implemented in an 0.13 μm silicon-germanium (SiGe) BiCMOS technology. The switch achieves very high power handling capability in transmit mode, while maintaining low insertion loss, by utilizing an asymmetric topology. In receive mode, low noise is obtained by integrating a lumped-element matching network used simultaneously as a noise matching network for the LNA, as well as a lumped λ/4 transformer for the SPDT switch isolation. In transmit mode, the SPDT-LNA results in 1.1 dB minimum insertion loss, 26 dB isolation, and 26.9 dBm output P1dB at 10 GHz. In receive mode, the measured minimum noise figure (NF) is 1.9 dB with 15 dB gain at 10 GHz. To the authors' best knowledge, these results are the lowest NF and highest transmit output P1dB for any Si-based SPDT-LNA currently reported at X-band, and represents a significant step towards the realization of next-generation of Si-based high performance T/R modules.

Original languageEnglish (US)
Title of host publication2016 IEEE MTT-S International Microwave Symposium, IMS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509006984
DOIs
StatePublished - Aug 9 2016
Externally publishedYes
Event2016 IEEE MTT-S International Microwave Symposium, IMS 2016 - San Francisco, United States
Duration: May 22 2016May 27 2016

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2016-August
ISSN (Print)0149-645X

Conference

Conference2016 IEEE MTT-S International Microwave Symposium, IMS 2016
CountryUnited States
CitySan Francisco
Period5/22/165/27/16

Fingerprint

Low noise amplifiers
Insertion losses
superhigh frequencies
Germanium
insertion loss
low noise
germanium
switches
amplifiers
modules
Switches
Silicon
Noise figure
silicon
BiCMOS technology
isolation
output
Topology
transformers
topology

Keywords

  • high power
  • LNA
  • low noise amplifier
  • NF
  • noise figure
  • P1dB
  • SiGe
  • silicon-germanium
  • Single-pole double-throw
  • SPDT
  • switch
  • T/R
  • X-band

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Ju, I., Schmid, R. L., Cho, M. K., Zeinolabedinzadeh, S., Mitchell, M., & Cressler, J. D. (2016). Co-design of a SiGe BiCMOS X-band, asymmetric, low insertion loss, high power handling SPDT Switch and an Ultra Low Noise LNA for next-generation T/R modules. In 2016 IEEE MTT-S International Microwave Symposium, IMS 2016 [7540304] (IEEE MTT-S International Microwave Symposium Digest; Vol. 2016-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWSYM.2016.7540304

Co-design of a SiGe BiCMOS X-band, asymmetric, low insertion loss, high power handling SPDT Switch and an Ultra Low Noise LNA for next-generation T/R modules. / Ju, Inchan; Schmid, Robert L.; Cho, Moon Kyu; Zeinolabedinzadeh, Saeed; Mitchell, Mark; Cressler, John D.

2016 IEEE MTT-S International Microwave Symposium, IMS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7540304 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2016-August).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ju, I, Schmid, RL, Cho, MK, Zeinolabedinzadeh, S, Mitchell, M & Cressler, JD 2016, Co-design of a SiGe BiCMOS X-band, asymmetric, low insertion loss, high power handling SPDT Switch and an Ultra Low Noise LNA for next-generation T/R modules. in 2016 IEEE MTT-S International Microwave Symposium, IMS 2016., 7540304, IEEE MTT-S International Microwave Symposium Digest, vol. 2016-August, Institute of Electrical and Electronics Engineers Inc., 2016 IEEE MTT-S International Microwave Symposium, IMS 2016, San Francisco, United States, 5/22/16. https://doi.org/10.1109/MWSYM.2016.7540304
Ju I, Schmid RL, Cho MK, Zeinolabedinzadeh S, Mitchell M, Cressler JD. Co-design of a SiGe BiCMOS X-band, asymmetric, low insertion loss, high power handling SPDT Switch and an Ultra Low Noise LNA for next-generation T/R modules. In 2016 IEEE MTT-S International Microwave Symposium, IMS 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7540304. (IEEE MTT-S International Microwave Symposium Digest). https://doi.org/10.1109/MWSYM.2016.7540304
Ju, Inchan ; Schmid, Robert L. ; Cho, Moon Kyu ; Zeinolabedinzadeh, Saeed ; Mitchell, Mark ; Cressler, John D. / Co-design of a SiGe BiCMOS X-band, asymmetric, low insertion loss, high power handling SPDT Switch and an Ultra Low Noise LNA for next-generation T/R modules. 2016 IEEE MTT-S International Microwave Symposium, IMS 2016. Institute of Electrical and Electronics Engineers Inc., 2016. (IEEE MTT-S International Microwave Symposium Digest).
@inproceedings{835e66edfd3f4bc8949baddcebaf3f36,
title = "Co-design of a SiGe BiCMOS X-band, asymmetric, low insertion loss, high power handling SPDT Switch and an Ultra Low Noise LNA for next-generation T/R modules",
abstract = "This work proposes an asymmetric SPDT transmit/receive (T/R) switch co-optimized with a low-noise amplifier (LNA) tailored to X-band operation and implemented in an 0.13 μm silicon-germanium (SiGe) BiCMOS technology. The switch achieves very high power handling capability in transmit mode, while maintaining low insertion loss, by utilizing an asymmetric topology. In receive mode, low noise is obtained by integrating a lumped-element matching network used simultaneously as a noise matching network for the LNA, as well as a lumped λ/4 transformer for the SPDT switch isolation. In transmit mode, the SPDT-LNA results in 1.1 dB minimum insertion loss, 26 dB isolation, and 26.9 dBm output P1dB at 10 GHz. In receive mode, the measured minimum noise figure (NF) is 1.9 dB with 15 dB gain at 10 GHz. To the authors' best knowledge, these results are the lowest NF and highest transmit output P1dB for any Si-based SPDT-LNA currently reported at X-band, and represents a significant step towards the realization of next-generation of Si-based high performance T/R modules.",
keywords = "high power, LNA, low noise amplifier, NF, noise figure, P1dB, SiGe, silicon-germanium, Single-pole double-throw, SPDT, switch, T/R, X-band",
author = "Inchan Ju and Schmid, {Robert L.} and Cho, {Moon Kyu} and Saeed Zeinolabedinzadeh and Mark Mitchell and Cressler, {John D.}",
year = "2016",
month = "8",
day = "9",
doi = "10.1109/MWSYM.2016.7540304",
language = "English (US)",
series = "IEEE MTT-S International Microwave Symposium Digest",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 IEEE MTT-S International Microwave Symposium, IMS 2016",

}

TY - GEN

T1 - Co-design of a SiGe BiCMOS X-band, asymmetric, low insertion loss, high power handling SPDT Switch and an Ultra Low Noise LNA for next-generation T/R modules

AU - Ju, Inchan

AU - Schmid, Robert L.

AU - Cho, Moon Kyu

AU - Zeinolabedinzadeh, Saeed

AU - Mitchell, Mark

AU - Cressler, John D.

PY - 2016/8/9

Y1 - 2016/8/9

N2 - This work proposes an asymmetric SPDT transmit/receive (T/R) switch co-optimized with a low-noise amplifier (LNA) tailored to X-band operation and implemented in an 0.13 μm silicon-germanium (SiGe) BiCMOS technology. The switch achieves very high power handling capability in transmit mode, while maintaining low insertion loss, by utilizing an asymmetric topology. In receive mode, low noise is obtained by integrating a lumped-element matching network used simultaneously as a noise matching network for the LNA, as well as a lumped λ/4 transformer for the SPDT switch isolation. In transmit mode, the SPDT-LNA results in 1.1 dB minimum insertion loss, 26 dB isolation, and 26.9 dBm output P1dB at 10 GHz. In receive mode, the measured minimum noise figure (NF) is 1.9 dB with 15 dB gain at 10 GHz. To the authors' best knowledge, these results are the lowest NF and highest transmit output P1dB for any Si-based SPDT-LNA currently reported at X-band, and represents a significant step towards the realization of next-generation of Si-based high performance T/R modules.

AB - This work proposes an asymmetric SPDT transmit/receive (T/R) switch co-optimized with a low-noise amplifier (LNA) tailored to X-band operation and implemented in an 0.13 μm silicon-germanium (SiGe) BiCMOS technology. The switch achieves very high power handling capability in transmit mode, while maintaining low insertion loss, by utilizing an asymmetric topology. In receive mode, low noise is obtained by integrating a lumped-element matching network used simultaneously as a noise matching network for the LNA, as well as a lumped λ/4 transformer for the SPDT switch isolation. In transmit mode, the SPDT-LNA results in 1.1 dB minimum insertion loss, 26 dB isolation, and 26.9 dBm output P1dB at 10 GHz. In receive mode, the measured minimum noise figure (NF) is 1.9 dB with 15 dB gain at 10 GHz. To the authors' best knowledge, these results are the lowest NF and highest transmit output P1dB for any Si-based SPDT-LNA currently reported at X-band, and represents a significant step towards the realization of next-generation of Si-based high performance T/R modules.

KW - high power

KW - LNA

KW - low noise amplifier

KW - NF

KW - noise figure

KW - P1dB

KW - SiGe

KW - silicon-germanium

KW - Single-pole double-throw

KW - SPDT

KW - switch

KW - T/R

KW - X-band

UR - http://www.scopus.com/inward/record.url?scp=84985001726&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84985001726&partnerID=8YFLogxK

U2 - 10.1109/MWSYM.2016.7540304

DO - 10.1109/MWSYM.2016.7540304

M3 - Conference contribution

AN - SCOPUS:84985001726

T3 - IEEE MTT-S International Microwave Symposium Digest

BT - 2016 IEEE MTT-S International Microwave Symposium, IMS 2016

PB - Institute of Electrical and Electronics Engineers Inc.

ER -