Co-design of a SiGe BiCMOS X-band, asymmetric, low insertion loss, high power handling SPDT Switch and an Ultra Low Noise LNA for next-generation T/R modules

Inchan Ju, Robert L. Schmid, Moon Kyu Cho, Saeed Zeinolabedinzadeh, Mark Mitchell, John D. Cressler

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

This work proposes an asymmetric SPDT transmit/receive (T/R) switch co-optimized with a low-noise amplifier (LNA) tailored to X-band operation and implemented in an 0.13 μm silicon-germanium (SiGe) BiCMOS technology. The switch achieves very high power handling capability in transmit mode, while maintaining low insertion loss, by utilizing an asymmetric topology. In receive mode, low noise is obtained by integrating a lumped-element matching network used simultaneously as a noise matching network for the LNA, as well as a lumped λ/4 transformer for the SPDT switch isolation. In transmit mode, the SPDT-LNA results in 1.1 dB minimum insertion loss, 26 dB isolation, and 26.9 dBm output P1dB at 10 GHz. In receive mode, the measured minimum noise figure (NF) is 1.9 dB with 15 dB gain at 10 GHz. To the authors' best knowledge, these results are the lowest NF and highest transmit output P1dB for any Si-based SPDT-LNA currently reported at X-band, and represents a significant step towards the realization of next-generation of Si-based high performance T/R modules.

Original languageEnglish (US)
Title of host publication2016 IEEE MTT-S International Microwave Symposium, IMS 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509006984
DOIs
StatePublished - Aug 9 2016
Externally publishedYes
Event2016 IEEE MTT-S International Microwave Symposium, IMS 2016 - San Francisco, United States
Duration: May 22 2016May 27 2016

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2016-August
ISSN (Print)0149-645X

Conference

Conference2016 IEEE MTT-S International Microwave Symposium, IMS 2016
CountryUnited States
CitySan Francisco
Period5/22/165/27/16

Keywords

  • high power
  • LNA
  • low noise amplifier
  • NF
  • noise figure
  • P1dB
  • SiGe
  • silicon-germanium
  • Single-pole double-throw
  • SPDT
  • switch
  • T/R
  • X-band

ASJC Scopus subject areas

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Ju, I., Schmid, R. L., Cho, M. K., Zeinolabedinzadeh, S., Mitchell, M., & Cressler, J. D. (2016). Co-design of a SiGe BiCMOS X-band, asymmetric, low insertion loss, high power handling SPDT Switch and an Ultra Low Noise LNA for next-generation T/R modules. In 2016 IEEE MTT-S International Microwave Symposium, IMS 2016 [7540304] (IEEE MTT-S International Microwave Symposium Digest; Vol. 2016-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWSYM.2016.7540304