Co-deposition of cobalt disilicide on silicon-germanium thin films

P. T. Goeller, B. I. Boyanov, D. E. Sayers, R. J. Nemanich

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

The formation of CoSi2 on strained epitaxial Si0.8Ge0.2/Si(100) films has been studied as a function of the deposition method and annealing temperature. Two types of deposition processes were used: a direct method, where 5 nm of pure Co metal were deposited at room temperature onto a strained 80 nm thick Si0.8Ge0.2 layer; and a co-deposition method, where 5 nm Co and 18.2 nm Si were simultaneously deposited in a 1:2 ratio onto a strained Si0.8Ge0.2 layer at 450°C. Samples were then annealed at temperatures ranging from 500 to 800°C. Extended X-ray absorbance fine structure spectroscopy (EXAFS) and X-ray diffraction (XRD) were used to characterize the structure of the resulting films. It was found that the samples prepared via the direct deposition method did not convert to CoSi2 at any annealing temperature up to 800°C, while the co-deposited samples formed epitaxial CoSi2 at even the lowest annealing temperature of 500°C. These results are discussed in terms of proposed reaction mechanisms of the different deposition methods, based on consideration of the Co-Si-Ge ternary phase diagram.

Original languageEnglish (US)
Pages (from-to)206-210
Number of pages5
JournalThin Solid Films
Volume320
Issue number2
DOIs
StatePublished - May 18 1998
Externally publishedYes

Keywords

  • Cobalt disilicide
  • EXAFS
  • Silicon-germanium alloys

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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