Abstract
In this letter, we demonstrate the feasibility of building thin-film transistor (TFT) complementary metaloxidesemiconductor (CMOS) operational amplifiers (op-amps) at low temperature (180 °C) for large-area sensor applications. The classic two-stage Miller-compensated CMOS design is built using a-Si:H and pentacene TFTs. In addition, we have studied the impact of electrical stress-induced aging of TFTs on op-amp performance using two different kinds of biasing circuits.
Original language | English (US) |
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Article number | 5750018 |
Pages (from-to) | 650-652 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 32 |
Issue number | 5 |
DOIs | |
State | Published - May 2011 |
Keywords
- Analog-to-digital converter (ADC)
- hydrogenated amorphous silicon (a-Si:H)
- op-amp
- pentacene
- thin-film transistors (TFTs)
- unity-gain frequency (UGF)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering